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Preparation method of porous conducting nano copper film material with ultra- hydrophobicity
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A technology of porous conductive and thin-film materials, which is applied in the fields of biochips, microfluidic devices, and semiconductor chip surfaces, and can solve the problems of increasing the design difficulty and manufacturing cost of microfluidic devices
Inactive Publication Date: 2010-01-06
BEIJING UNIV OF TECH
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Problems solved by technology
[0004] In microfluidic testing and sensing equipment and microfluidic devices, some conductive materials need to be laid inside or around the superhydrophobic film, which greatly increases the design difficulty and manufacturing cost of microfluidic devices.
At present, there is no report of a porous nano-copper film with superhydrophobicity and conductivity. Using this nano-copper film as a microfluidic tube wall will reduce the design difficulty and manufacturing cost of microfluidic devices, and promote microfluidic devices, Rapid Development of Biochip and Microelectronics Industry
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Embodiment 1
[0018] 1. Vacuum the deposition chamber first, and the vacuum degree reaches 10 -4 Above Pa, the substrate is heated to 350°C to drive off the oxygen molecules in and around the substrate, and then lowered to 100°C. Then fill it with argon and keep the air pressure at 0.1Pa;
[0019] 2. Deposit a layer of metal copper film on the solid surface as the substrate with a power 300W deposition method, with a thickness of 0.5 microns;
[0020] 3. The substrate was sputtered with low power 50W in situ, the substrate temperature was 100°C, and the sputtering treatment time was 50 minutes.
[0021] The wettability and conductivity of the film surface prepared in this example were measured, and the static contact angle with water was 155.82°, and the conductivity was 2.4×10 3 S / cm -1 .
Embodiment 2
[0023] 1. Vacuum the deposition chamber first, and the vacuum degree reaches 10 -4 Above Pa, the substrate is heated to 400°C to drive off the oxygen molecules in and around the substrate, and then lowered to 100°C. Then fill it with argon and keep the air pressure at 0.3Pa;
[0024] 2. Deposit a layer of metal copper film on the solid surface as the substrate with a higher power 350W deposition method, with a thickness of 1.0 microns;
[0025] 3. The substrate was sputtered with low power 100W in situ, the substrate temperature was kept at 120°C, and the sputtering treatment time was 70 minutes.
[0026] The wettability and conductivity of the film surface prepared in this example were measured, and the static contact angle with water was 157.50°, and the conductivity was 5.7×10 3 S / cm -1 .
Embodiment 3
[0028] 1. Vacuum the deposition chamber first, and the vacuum degree reaches 10 -4 Above Pa, the substrate is heated to 450°C to drive off the oxygen molecules in and around the substrate, and then lowered to 100°C. Then fill it with argon and keep the air pressure at 0.5Pa;
[0029] 2. Deposit a layer of metal copper film on the solid surface as the substrate with a power 400W deposition method, with a thickness of 1.5 microns;
[0030] 3. The substrate is sputtered with a power of 80W in situ, the temperature of the substrate is kept at 150° C., and the sputtering treatment time is 90 minutes.
[0031] The wettability and conductivity of the film surface prepared in this example were measured, and the static contact angle with water was 153.43°, and the conductivity was 4.6×10 3 S / cm -1 .
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Abstract
The invention discloses a method for manufacturing a porous conductive nanometer copper film with super-hydrophobic performance, belonging to the surface technical field. Presently, no report about a porous nanometer copper film with super-hydrophobic performance and conductivity performance exists. The adopted technical proposal is to deposit a layer of metal copper film on the surface of a solid by high power, and then to carry out low power sputtering deposition on the metal copper film surface by a low power sputtering method. The researches show that the surface contact angle of the layer of metal copper which is directly and firstly deposited is about 90 degrees, the contact angle is about 155 degrees after the stable low power sputtering deposition, thereby the super-hydrophobic performance is achieved and good conductivity performance is maintained. The nanometer porous film material not only has super-hydrophobic performance, but also has better mechanical performance than other super-hydrophobic film materials, good thermal conductive performance and good electrical conduction performance. The film material is mainly applied in the fields such as surface technologies of microflow devices, biological chips and semiconductor chips, etc.
Description
technical field [0001] The invention relates to a method for preparing a porous nano-copper thin film material with superhydrophobicity and conductive properties. The thin film material is suitable for solid surfaces that require waterproofing and wetting and conduction in the working environment of micro-liquid measurement, and is mainly used in microfluidic devices, Biochip, semiconductor chip surface technology and other fields. Background technique [0002] The application of wettability is extremely wide. The microelectronics industry, printing industry, paper industry, transportation industry and even the synthesis and preparation of new materials, as well as medicine and biochips are all closely related to wettability. In recent years, interface materials with special wetting properties have attracted extensive attention. Recently, researchers have successfully prepared many superhydrophobic polymers with nanostructures. [0003] With the development of microfluidic...
Claims
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Application Information
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