Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing silicon probe

A manufacturing method and probe technology, applied in the field of testing, can solve problems such as photoresist accumulation, uneven surface, and difficult control, and achieve the effects of high light reflectivity, reduced damping, and simple process

Inactive Publication Date: 2010-02-03
DALIAN UNIV OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of Li Xinxin and others, the price of SOI sheet is relatively expensive, and because the beam pattern is wet etched first in the process, the corroded groove is relatively deep, and it is easy to cause the accumulation of photoresist when the silicon tip mask is photolithographically etched. After pre-baking, due to the swelling effect of the photoresist, the surface will be uneven and the pattern resolution will be reduced. In addition, the beams are required to reach the buried layer of SOI while the silicon tip is formed in the process, and it is also difficult to control.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing silicon probe
  • Method for preparing silicon probe
  • Method for preparing silicon probe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and technical solutions. The silicon probe is made of n-type (100) double-sided polished single crystal silicon 1 with a thickness of 300 microns. The length, width and thickness of the probe beam are 450 microns, 50 microns, and 3 microns respectively, and the tip height is 10 microns. First double-sided thermal oxidation of the upper surface and the lower surface of single crystal silicon 1 to form the upper surface silicon dioxide layer 2 and the lower surface silicon dioxide layer 3, the thickness of which is 1.3 microns, see the attached figure 1 . Then, on the silicon dioxide layer 3 on the lower surface, a rectangular window a is formed by photolithography, see attached figure 2 . Next, use potassium hydroxide solution containing isopropanol to anisotropically etch the rectangular window a to a certain depth on the lower surface of the si...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a silicon probe manufacturing method, pertains to testing technique domain, and relates to manufacturing of AFM probes. The probe is manufactured with dry etching and wet etching methods in combination: firstly, a silicon tip mask is formed by photo-etching; secondly, the beam is etched by dry etching to certain depth; thirdly, the silicon tip and the beam are etchedthrough a wet etching process synchronously; after the silicon tip is sharpened, the release beam is etched from the back by dry etching; finally, a metal layer is plated on the back of the probe bysputtering or evaporation, to enhance optical reflectance; in the wet etching process, potash solution is used to etch the silicon tip anisotropically, and silicon tips with different aspect ratios can be obtained with potash solution in different concentrations. The method employs mono-crystalline silicon, and is characterized in low cost and simple process; probes manufactured with that method can be used on AFMs.

Description

technical field [0001] The invention belongs to the technical field of testing and relates to the manufacture of atomic force microscope probes. Background technique [0002] Atomic force microscopy (AFM) is a tool invented by G.Bining et al. in the 1980s to measure the surface morphology of samples. It has been widely used in many fields such as physics, chemistry, electronics, materials, and medicine. It has become a tool for people to study and observe the microscopic world. powerful tool. AFM is to fix one end of the microcantilever which is extremely sensitive to micro force, and the tip of the other end is in light contact with the sample surface. Due to the extremely weak force between the atoms at the tip of the tip and the atoms on the sample surface, the beam bends. Using optical detection method, The deformation of the micro-cantilever can be measured to obtain information on the surface topography of the sample. It can be seen that the cantilever beam probe is a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G12B21/08B81C1/00G01Q60/38
Inventor 崔岩石二磊夏劲松王立鼎
Owner DALIAN UNIV OF TECH