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Grating ion beam etching optical on-line detection device and detection method

An ion beam etching and detection device technology, applied in the scientific field, achieves the effects of low production cost, improved development efficiency, and accurate etching cut-off time

Inactive Publication Date: 2010-02-24
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the problems existing in the prior art, the present invention provides a scanning ion beam etching and optical online detection device and scanning detection method, through the online detection of the one-dimensional spatial distribution of grating diffraction intensity with the change of etching time, to solve the problem of precise control Grating Etch Time End Issues

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  • Grating ion beam etching optical on-line detection device and detection method
  • Grating ion beam etching optical on-line detection device and detection method

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Embodiment Construction

[0023] see figure 1, 1 is the ion beam emitted by the ion beam etching machine, 2 is the worktable of the ion beam etching machine, which can translate along the +x and -x directions, and the etched grating 3 is fixed on the working surface of the worktable , the incident direction of the ion beam is perpendicular to the working surface of the workbench. The rectangular frame 10 in the figure represents the vacuum chamber of the ion beam etching system, and the optical plane mirror 4 is arranged on a rotatable support in the vacuum chamber. 5 is the etching machine window, 6 is the infrared laser for scanning etching monitoring, the angle between the reflective surface of the optical flat mirror 4 and the working plane of the grating ion beam etching workbench can be adjusted within 0 90°, and the optical path When adjusting, the position of the laser can ensure that the incident beam enters the surface of the etched grating near the self-collimation angle of the etched grati...

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Abstract

The invention relates to the diffraction optics, micro-production and other scientific fields, in particular to an on-line optical scanning detection device and a method in scanning of an ion beam etching. The device comprises an ion beam etching workbench, an optical plane reflection mirror which is arranged in a vacuum chamber of an iron beam etching system and a laser, a photoelectric detector,a digital voltmeter and a computer data collection system which are arranged at the outside of the vacuum chamber, the position of the laser can ensure that an incident light beam returns to the reflection mirror along the original path after passing through the reflection mirror and being diffracted by an grating to be etched, thus being received by the photoelectric detector which is arranged on the diffraction direction; the photoelectric detector carries out the analog-to-digital conversion of the light signal by the digital voltmeter and then outputs to the computer data collection system for carrying out the output display and storage. The detection method thereof is to determine the end point of etching of the grating which is etched according to the shape of a minus 1 level diffraction intensity one-dimensional distribution curve which is displayed on a computer display. The method takes comprehensive consideration of the grating diffraction intensity one-dimensional spatial distribution at different times, which can precisely control the best cut-off time of etching of the grating.

Description

technical field [0001] The invention relates to the scientific fields of diffraction optics and microfabrication, and in particular to an on-line optical scanning detection device and method for scanning ion beam etching of a diffraction grating. Background technique [0002] Ion beam etching technology has played an important role in the fabrication of diffraction gratings, binary optical elements, and microstructures. At present, many ion beam etching processes still control the etching depth of the material through the etching time. The premise of controlling the etching time in this way is that the etching rate of the material is close to a constant in different etching experiments. However, due to the complexity of the ion beam etching process of materials, many uncertain factors will affect the etching characteristics of materials, making the actual etching rate unstable. If the etching depth is simply controlled by the etching time, it is impossible to dynamically an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G02B5/18
Inventor 刘颖徐向东洪义麟徐德权付绍军
Owner UNIV OF SCI & TECH OF CHINA