Electrode for generating plasma and plasma processing apparatus using same

A plasma and electrode technology, which is applied in the direction of plasma, circuit, discharge tube, etc., can solve the problems of no prompting, etc., and achieve the effects of not being easy to individual difference, suppressing the generation of dust, and uniform electrical conduction and heat conduction
CN101005727BActive Publication Date: 2012-02-08TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2012-02-08

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Abstract

The invention provides an electrode for plasma emergence. In the electrode for plasma emergence set opposed to a base plate and composed by matal base and conductor plate without broken danger of conductor plate, ensuring combination state with good uniformity between electric conduction of matal base and conductor plate and heat conduction in surface. The electrode is composed by following material: dipping metal such as Si in base metal formed by porous multiple ceramics such as silicon carbide, having metal base compound material of junction surface at least opposed to whole processed surface of the base plate; a conductor plate such as CVD-silicon carbide formed by resist plasma material melting connecting on junction surface of the metal base compound material via metal. In this condition, dipping metal in the base metal, melting connecting the conductor plate on the metal base compound material via the metal.
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Description

technical field

[0001] The present invention relates to an electrode for generating plasma facing a substrate subjected to plasma processing, and a plasma processing apparatus using the electrode. Background technique

[0002] In the manufacturing process of semiconductors and liquid crystal devices, etc., plasma treatment using plasma is widely used, however, plasma treatment apparatuses for performing such plasma treatment are, for example, Figure 8 As shown, in the processing container 10 formed by the vacuum chamber, there are: a mounting table 11 for mounting a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate, which is also used as a lower electrode; On the upper side, the shower head 12 has a plurality of gas supply holes 12a. The structure is as follows: an upper electrode 13 is provided on the lower surface of the shower head 12, and on one of the upper electrode 13 and the mounting table 11, for example, the mounting table 11, a high-freque...

Claims

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