Electrode for generating plasma and plasma processing apparatus using same

A plasma and electrode technology, which is applied in the direction of plasma, circuit, discharge tube, etc., can solve the problem of no prompting, etc., and achieve the effects of not being prone to individual differences, good electrical conduction and heat conduction, and less risk of rupture

Active Publication Date: 2007-07-25
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no suggestion on how to make the metal base and the conductor plate in a state of in-plane contact with uniform electrical conduction and thermal conduction

Method used

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  • Electrode for generating plasma and plasma processing apparatus using same
  • Electrode for generating plasma and plasma processing apparatus using same
  • Electrode for generating plasma and plasma processing apparatus using same

Examples

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Embodiment Construction

[0039]Next, embodiments of the present invention will be described. 1 is a cross-sectional view showing an RIE (Reactive Ion Etching) plasma etching apparatus to which an electrode according to an embodiment of the present invention is applied as a plasma processing apparatus as an upper electrode. 2 in FIG. 1 is a processing vessel (vacuum chamber) made of, for example, aluminum. The processing container 2 is an airtight structure composed of a small-diameter cylindrical upper portion 2a and a large-diameter cylindrical lower portion 2b. The processing container 2 is provided with a supporting stage 3 which horizontally supports a semiconductor wafer W (hereinafter referred to as a wafer) as a substrate to be processed and is a mounting table which functions as a lower electrode. The supporting stage 3 is made of, for example, aluminum, and is supported by a conductor supporting base 5 via an insulating plate 4 . In addition, on the outer periphery above the support stage 3...

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Abstract

An electrode for generating plasma and a plasma process apparatus are provided to prevent generation of excessive local stress due to a thermal expansive coefficient difference by using a metal-group composite material. A plasma generation electrode includes a metal-group composite material(8) and a conductive plate(82). The metal-group composite material has a junction surface facing a surface to be processed of a substrate by impregnating silicon into silicon carbide(9) of a porous ceramic. The conductive plate is made of a plasma-resistant material melt-joined on a junction surface of the metal-group composite material by a metal.

Description

technical field [0001] The present invention relates to an electrode for generating plasma facing a substrate subjected to plasma processing, and a plasma processing apparatus using the electrode. Background technique [0002] In the manufacturing process of semiconductors and liquid crystal devices, etc., plasma processing using plasma is widely used, but a plasma processing apparatus for performing such plasma processing is shown in, for example, shown in FIG. In the container 10, there are: a mounting table 11 for mounting a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate, which is also used as a lower electrode; Nozzle12. The structure is as follows: an upper electrode 13 is provided on the lower surface of the shower head 12, and on one of the upper electrode 13 and the mounting table 11, for example, the mounting table 11, a high-frequency wave for plasma generation is applied through a high-frequency power source 14, and a high frequency wav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/24H01L21/00H01L21/3065H01L21/311H01L21/3213C23C4/02C23C4/10
CPCH01J37/3255H01L21/67069
Inventor 林大辅
Owner TOKYO ELECTRON LTD
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