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Plasma processing apparatus

A technology of plasma and treatment device, applied in the field of plasma treatment device, can solve the problem of ungrounded electrodes, etc., and achieve the effect of excellent effect.

Active Publication Date: 2007-08-01
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Each plasma electrode is not grounded

Method used

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Examples

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Embodiment Construction

[0044] An example of the plasma processing apparatus of the present invention will be described in detail below with reference to the drawings.

[0045] Fig. 1 is a longitudinal sectional structural diagram showing an example of a plasma processing apparatus of the present invention, Fig. 2 is a cross-sectional structural diagram showing a plasma processing apparatus (heating unit omitted), and Fig. 3 is a diagram showing a high-frequency power supply connected to The equivalent circuit diagram of the frequency circuit. In addition, here, a silicon nitride film (SiN) is formed by plasma CVD using ammonia gas as a plasma gas and hexachlorodisilane (hereinafter also referred to as "HCD") gas as a film-forming gas. Example to illustrate.

[0046] As shown in the figure, this plasma processing apparatus 10 has a topped cylindrical processing container 12 with an open lower end. The processing container 12 is entirely formed of, for example, quartz, and a top plate 14 made of quart...

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Abstract

A plasma processing apparatus for performing prescribed plasma processing to a processing object (W) is provided with a process container (12) which can be vacuumized, a processing object holding means (20) for holding the processing object, a high frequency power supply (58) for generating a high frequency voltage, and a plasma gas supplying means (38) for supplying the process container with a gas to be brought into the plasma state. To generate plasma in the process container, a pair of plasma electrodes (56A, 56B), which are both brought into excitation electrode status, are connected by wiring (60) on an output side of the high frequency power supply. A high frequency matching means (72) is provided at the middle of the wiring, and both the plasma electrodes (56A, 56B) are not grounded. Thus, plasma density can be increased, and furthermore, plasma generating efficiency can be improved.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing plasma processing such as film formation and etching on a target object such as a semiconductor wafer. Background technique [0002] Generally, in order to manufacture a semiconductor integrated circuit, a semiconductor wafer composed of a silicon substrate or the like is subjected to various treatments such as film formation, etching, oxidation, diffusion, modification, and natural oxide film removal. When using a vertical so-called batch-type heat treatment apparatus to perform these treatments, at first, semiconductor wafers are transferred from a cassette that can hold a plurality of, for example, about 25 semiconductor wafers, onto a vertical wafer boat, and the wafers are divided by the wafer boat. Multi-level support. The wafer boat can carry, for example, approximately 30 to 150 wafers depending on the size of the wafers. The wafer boat is carried (loaded) into the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31
CPCH01J37/32091H01J37/32183H01L21/3065
Inventor 阿部寿治高桥俊树松浦广行
Owner TOKYO ELECTRON LTD
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