Magnetic device unit using magnetic domain dragging and method for operating the same

Abstract

A magnetic device unit using magnetic domain dragging and a method of operating the same are provided. The magnetic device unit includes: a data storage cell including a free layer having a switchable magnetization direction and having a plurality of adjoining magnetic domains, and a reference layer formed corresponding to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions are formed in an array on the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell stores a plurality of bits of data in an array; a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array.

Description

Technical Field [0001] The present invention relates to a magnetic device unit, and more particularly, to a magnetic device unit for reading and writing multiple data bits using a magnetic domain dragging technique and an operating method thereof. Background Art [0002] Magnetic devices used for information storage can be roughly divided into memory devices and storage devices. Memory devices require improvements in solid-state performance, while storage devices require improvements in storage capacity. [0003] Magnetic random access memory (MRAM) is a non-volatile memory device and a new solid-state magnetic memory that uses the magnetoresistance effect based on the spin-related conduction phenomenon of nanomagnetic materials. That is, MRAM uses the giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) generated by the significant influence of spin on the electron transport phenomenon. Here, spin is the degree of freedom of electrons. [0004] GMR is the resista...