Method for manufacturing transistor structure

Abstract

The present invention relates to semiconductor integrated circuits. More particularly, but not exclusively, the invention relates to strained channel complimentary metal oxide semiconductor (CMOS) transistor structures and fabrication methods thereof. There is provided a method of forming a strained channel transistor structure on a substrate, comprising the steps of: forming a source stressor recess comprising a deep source recess and a source extension recess; forming a drain stressor recess comprising a deep drain recess and a drain extension recess; and subsequently forming a source stressor in said source stressor recess and a drain stressor in said drain stressor recess. The deep source / drain and source / drain extension stressors are formed by an uninterrupted etch process and an uninterrupted epitaxy process.

Description

technical field [0001] The present invention relates to semiconductor integrated circuits. More particularly, but not exclusively, the present invention relates to strained-channel complementary metal-oxide-semiconductor (CMOS) transistor structures and methods of fabrication thereof. Background technique [0002] Integrated circuits containing thousands of semiconductor devices play an important role in many fields of technology. The continued development of devices with high performance at reasonable cost is important to the future development of some of these technologies. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are commonly used in semiconductor integrated circuits. It has been demonstrated that the performance of MOSFET devices can be enhanced by applying mechanical stress to parts of the device. [0003] A known MOSFET 10 is schematically shown in Figure 1 (Prior Art). MOSFET 10 is typically fabricated on a semiconductor substrate 12, such as s...

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Problems solved by technology

[0022] Solutions to these problems have been long sought, but existing developments have not given or suggested any solutions, and thus solutions to these problems have long eluded those skilled in the art.

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