Semiconductor substrate processing apparatus, method, and medium

Abstract

A semiconductor substrate processing apparatus can supply RF powers having the same frequency to upper and lower electrodes serving to generate different degrees of uniformity, and control a power ratio of the RF powers, thereby enhancing a processing uniformity of a semiconductor substrate. The apparatus includes a vacuum chamber to receive a semiconductor substrate, upper and lower electrodes disposed within the vacuum chamber, RF power suppliers to supply RF powers having the same frequency to the upper and lower electrodes, and a controller to control a power ratio of the RF powers supplied from the RF power suppliers to the upper and lower electrodes.

Description

technical field [0001] The present invention relates to an etching and deposition process in a semiconductor manufacturing process using plasma, more specifically, the present invention relates to a semiconductor substrate processing device, method and medium, the present invention can enhance the uniformity of the processing plasma to Control etch uniformity. Background technique [0002] Generally, a semiconductor manufacturing process includes a plasma etching or deposition process in which a semiconductor substrate as a target substrate is etched or deposited by plasma. Among various plasma etching devices or plasma deposition devices, a planar type inductively coupled plasma processing device is generally used. [0003] A planar type inductively coupled plasma processing apparatus includes a pair of planar electrodes (upper and lower electrodes) placed in parallel in a vacuum chamber so that processing gas is supplied into the vacuum chamber by applying RF (Radio Frequ...

AI Technical Summary

Problems solved by technology

However, this technique has the problem of not being able to overcome the change in uniformity due to the change in the conditions of semiconductor substrate processing.

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