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Mamufaturing method of semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices

Inactive Publication Date: 2008-01-23
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the photolithography process implemented by prior art light sources such as ArF, KrF, and F2 light sources and photoresist patterning has limitations in realizing fine patterns of metal lines
[0002] That is, due to the limitations of the optical system and the limitations of the resolution of the photoresist polymer itself, there are limitations in realizing lines of a few microns

Method used

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  • Mamufaturing method of semiconductor device
  • Mamufaturing method of semiconductor device
  • Mamufaturing method of semiconductor device

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Embodiment Construction

[0016] A method for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0017] In describing embodiments, it will be understood that when a layer (film) is referred to as being on another layer or substrate, it can be directly on another layer or substrate, or intervening layers may also be present. Thus, when a layer is referred to as being directly on another layer or substrate, there are no intervening layers present.

[0018] Referring to FIG. 1, a photoresist 300 may be coated on a semiconductor substrate 100 formed of, for example, amorphous silicon.

[0019] Referring to FIG. 2, by exposing and developing the photoresist 300, a photoresist pattern 310 having a first width d1 can be formed. Here, the first width d1 may be a minimum line width that can be achieved through a photolithography process, and can be determined by taking the width of a line to be finally formed...

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PUM

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Abstract

A method for manufacturing a semiconductor device is provided. In the method, a photoresist pattern having a first width is formed on a semiconductor substrate, and the semiconductor substrate is etched using the photoresist pattern as a mask to form a semiconductor protrusion. An oxide layer is formed on the entire surface of the semiconductor substrate including the semiconductor protrusion. Subsequently, the semiconductor protrusion is removed to form a trench surrounded by the oxide layer. Thereafter, a blanket etch is performed on the trench to leave only a portion of the oxide layer formed around the trench. Metal is deposited on the entire surface of the semiconductor substrate including the partial oxide layer, and the partial oxide layer is removed to form a metal pattern.

Description

Background technique [0001] With the high integration of semiconductor devices, the devices are being miniaturized. Miniaturizing semiconductor devices also requires miniaturization / reduction in line size. However, the photolithography process implemented by prior art light sources such as ArF, KrF, and F2 light sources and photoresist patterning has limitations in realizing fine patterns of metal lines. [0002] That is, there are limitations in realizing lines of several micrometers due to the limitations of the optical system and the limitations of the resolution of the photoresist polymer itself. Contents of the invention [0003] Embodiments of the present invention provide a method for manufacturing a semiconductor device capable of precisely controlling a line width of a metal line through an oxidation process. [0004] In one embodiment, a method for manufacturing a semiconductor device includes: forming a photoresist pattern with a first width on a semiconductor s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76838H01L21/0337H01L21/0338H01L21/3086H01L21/3088
Inventor 郑恩洙
Owner DONGBU HITEK CO LTD