Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method for reflection mirror of silicon-based LCD device

A silicon-based liquid crystal and mirror surface technology, which is applied in the photoengraving process of the pattern surface, static indicators, semiconductor/solid-state device manufacturing, etc. The effect of quality improvement

Active Publication Date: 2008-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the reflective mirror process of the silicon-based liquid crystal display device made in the prior art, when the residual photoresist layer and anti-reflection layer are removed with an alkaline solution, since the material of the metal layer is an aluminum-copper alloy, the aluminum-copper alloy is subjected to alkaline Under the influence of the solution, an electrochemical reaction occurs, and the aluminum is consumed, causing serious depressions in the metal layer, which in turn leads to many depressions in the subsequent mirror surface, which affects the quality of the mirror surface.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method for reflection mirror of silicon-based LCD device
  • Manufacturing method for reflection mirror of silicon-based LCD device
  • Manufacturing method for reflection mirror of silicon-based LCD device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Liquid crystal on silicon (LCOS) is a new type of reflective liquid crystal display device. Unlike ordinary liquid crystals, LCOS combines CMOS technology to directly realize the driving circuit on the silicon wafer, and uses CMOS technology to make the active pixel matrix on the silicon substrate. On the bottom, it has the characteristics of small size and high resolution. In the present invention, an aluminum oxide layer is added on the surface of the metal layer, or an aluminum oxide layer and a silicon oxide layer are added simultaneously. The probability of electrochemical reaction occurring in contact with the solution is reduced, so that few depressions are produced on the reflective mirror surface, and the quality of the reflective mirror surface is improved. In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A reflective mirror face of silicon-based liquid crystal display device has the following preparation method: an alumina layer is formed on a metal layer; a silicon oxide layer is deposited on the alumina layer; an anti-reflecting layer is deposited on the surface of the silicon oxide layer; a pattern photoresistive layer is formed on the anti-reflecting layer; with the photoresistive layer as mask, the anti-reflecting layer, the silicon oxide layer, the alumina layer and the metal layer are etched and penetrated to reveal the silicon-based bottom; the photoresistive layer and the anti-reflecting layer are removed; insulated medium layers are deposited in a groove and on the surface of the silicon oxide layer; the insulated medium layers are evened out; the insulated medium layers, the silicon oxide layer and the alumina layer on the metal layer are removed to form a reflective mirror face. As the alumina layer and the silicon oxide layer are arranged on the surface of the metal layer, when the photoresistive layer and the anti-reflecting layer are removed by alkaline solution, the metal layer is protected by the alumina layer and the silicon oxide layer in order to have no electrochemistry reaction and no deboss in the reflective mirror face, thereby improving the quality of the reflective mirror face.

Description

technical field [0001] The invention relates to a manufacturing method of a liquid crystal on silicon (LCOS) display device, in particular to improving the defect of the reflective mirror of the liquid crystal on silicon display device during the process of manufacturing the reflective mirror of the liquid crystal on silicon display device. Background technique [0002] Liquid crystal on silicon (LCOS) is a new type of reflective liquid crystal display device. Unlike ordinary liquid crystals, LCOS combines CMOS technology to directly realize the driving circuit on the silicon wafer, and uses CMOS technology to make the active pixel matrix on the silicon substrate. On the bottom, it has the characteristics of small size and high resolution. [0003] An ideal LCOS should be flat, smooth and have a high reflectivity, so that it can ensure a good liquid crystal alignment and consistency of liquid crystal layer thickness, without distorting light, which requires that the reflecti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/133G03F7/00H01L21/00
Inventor 蒲贤勇傅静
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products