Memory device detecting method

A detection method and memory technology, applied in static memory, instruments, etc., can solve problems such as virtual welding, adhesion, and complex address line detection process, and achieve the effect of improving detection efficiency and accurate detection results.

Inactive Publication Date: 2008-06-11
SHENZHEN COSHIP ELECTRONICS CO LTD
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Problems solved by technology

[0002] Memory has been widely used in various products in the computer, electronics, and communication industries. Moreover, memory has high requirements for production technology (such as mounting technology). In the case of human factors (such as soldering errors, causing problems such as virtual soldering and adhesion), the memory often has short-circuit or open-circuit problems, which has a great impact on the product and often makes the product unable to operate normally
However, such problems are usually difficult to judge by the naked eye of technicians, and software problems caused by such hardware problems are not easy to locate and difficult to reproduce
[0003] The Chinese patent CN200410069098.2 "Detection method of flash memory" published on January 26, 20

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Examples

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Example Embodiment

[0075] Example 1

[0076] The first stage, reading and writing testing:

[0077] 1. HDDR is 0X0000000. Because the odd address of the memory cannot be read or written, EDDR is 0X1FFFFFE; for easy detection and calculation, set TD1 to "all 0", that is, 0X0000, and TD2 to "all 1", that is, 0XFFFF.

[0078] TD1 and TD2 can be interchanged, which does not affect the implementation of the present invention. The reason why TD1 and TD2 are set to "all 0" and "all 1" is to facilitate the setting of TDG1 and TDG2 in the second and third stages;

[0079] 2. Write TD1 to HDDR, read back and compare. If the result is correct, it means that each data line is set to low level '0' and it can be normal, which can eliminate the problem of the data line being constantly high level '1', and then , Go to the next step; if the result is not correct, it means that there is a problem in the reading and writing of the HDDR or the address line or the data line, stop the detection and report the problem;

...

Example Embodiment

[0131] Example 2

[0132] The difference between this embodiment and embodiment 1 is: in the second and third stages of embodiment 1, if a data line or address line is found to be faulty, the fault is recorded and the detection is continued. In this embodiment, in the second stage and the third stage, as soon as the data line or the address line is found to be faulty, the detection is stopped, the problem is reported, and after the fault is eliminated, the memory detection is restarted. The detection procedures of the second stage and the third stage of this embodiment are as follows: Figure 5 with Figure 6 Shown.

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Abstract

The invention discloses a test method for a storage, which mainly includes three test stages which are respectively read-write test, data wire test and address wire test and search for errors existed in the storage through step-by-step exclusive method which makes test results more accurately. Besides, the invention only needs utilizing the initial address and the final address to comprehensively detect whether the data wire has problems; and for detecting the address wire, the comprehensive test can be performed only by utilizing very few address locations. Moreover, through special arrangement of test data, test data groups and test address blocks, specific data wire and address wire on which an error is existed can be pointed out and the error can be reported in time, thereby greatly improving detection efficiency.

Description

technical field [0001] The invention relates to the technical field of detecting memory peripheral circuits and memory quality, in particular to a detection method for memory circuit short circuit and disconnection and unit. Background technique [0002] Memory has been widely used in various products in the computer, electronics, and communication industries. Moreover, memory has high requirements for production technology (such as mounting technology). In the case of human factors (such as soldering errors, causing problems such as false soldering and adhesion), the memory often has short-circuit or open-circuit problems, which has a great impact on the product and often makes the product unable to operate normally. However, such problems are usually difficult to judge by the naked eye of technicians, and software problems caused by such hardware problems are not easy to locate and difficult to reproduce. [0003] The Chinese patent CN200410069098.2 "Detection method of f...

Claims

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Application Information

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IPC IPC(8): G11C29/00
Inventor 杜军黄海欢
Owner SHENZHEN COSHIP ELECTRONICS CO LTD
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