Thin film transistor substrate and its producing method
A technology of thin film transistor and manufacturing method, applied in the field of thin film transistor substrate and its manufacturing, can solve the problems of low reliability of thin film transistor substrate and the like
Inactive Publication Date: 2008-07-02
INNOCOM TECH (SHENZHEN) CO LTD +1
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Problems solved by technology
[0007] In order to solve the problem of relatively low reliability of the thin film transistor substrate in the prior art, it is necessary to provide a thin film transistor with relatively high reliability
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[0019] see image 3 and Figure 4 , image 3 It is a schematic plan view of a partial structure of a preferred embodiment of the thin film transistor substrate of the present invention, Figure 4 yes image 3 Schematic enlarged cross-section along line IV-IV. The TFT substrate 2 includes an insulating substrate 201, a plurality of gate lines 23, a plurality of common electrode lines 24, a gate insulating layer 204, a plurality of data lines 27, a plurality of repair lines 272, a plurality of pixel electrodes 290, A plurality of opposite electrodes 220 and a plurality of thin film transistors 28 .
[0020] The plurality of gate lines 23 are arranged parallel to each other on the insulating substrate 201 . The plurality of common electrode lines 24 are spaced apart from the plurality of gate lines 23 and parallel to each other. The plurality of data lines 27 are arranged parallel to each other, and vertically insulated and intersect with the plurality of gate lines 23 to d...
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The invention relates to a film transistor substrate and a manufacture method thereof. The film transistor substrate comprises an insulating substrate, a plurality of gate lines, a gate insulating layer as well as a plurality of data lines and a plurality of repair lines. The plurality of gate lines are arranged on the insulating substrate. The gate insulating layer covers the plurality of gate lines. The plurality of data lines are arranged on the gate insulating layer and the data lines are respectively intersected in an insulating way with the plurality of gate lines. The plurality of repair lines are arranged on the insulating substrate; the repair lines are respectively parallel to and corresponding to the plurality of data lines and the part where the data lines and the gate lines intersect corresponding to the repair lines is disconnected. The film transistor substrate can use the repair lines for repairing the disconnecting data lines so as to increase the reliability of the film transistor substrate.
Description
technical field [0001] The invention relates to a thin film transistor (Thin Film Transistor, TFT) substrate and a manufacturing method thereof. Background technique [0002] Because the liquid crystal display is light, thin, and small, it is very suitable for use in desktop computers, notebook computers, personal digital assistants (Personal Digital Assistant, PDA), mobile phones, televisions, and various office automation and audio-visual equipment. Generally, when a user views a liquid crystal display from different angles, the image contrast decreases as the viewing angle increases, resulting in viewing angle limitations. The Fringe Field Switching (FFS) liquid crystal display is proposed based on the narrow viewing angle of the traditional liquid crystal display, which includes a liquid crystal display panel and a backlight module that provides light for the liquid crystal display panel. Wherein, the liquid crystal display panel includes a thin film transistor substrat...
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IPC IPC(8): H01L27/12H01L23/522H01L21/84H01L21/768G02F1/1362
Inventor 陈宏育谢朝桦彭家鹏
Owner INNOCOM TECH (SHENZHEN) CO LTD