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Ferroelectric memory devices having a protruding bottom electrode and methods of forming the same

A bottom electrode, ferroelectric storage technology, applied in static memory, electric solid state devices, digital memory information, etc., can solve the problems of reduced capacitor operating characteristics, reduced ferroelectric capacitor capacitance, and reduced data storage characteristics.

Inactive Publication Date: 2008-07-16
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This may result in a reduction in the capacitance of the ferroelectric capacitor
In addition, the data retention properties of the ferroelectric pattern may be degraded due to etch damage
[0007] However, if the thickness of the bottom electrode layer is reduced in order to shorten the etching time of the bottom electrode layer, other problems may arise, such as degradation of the operating characteristics of the capacitor.

Method used

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  • Ferroelectric memory devices having a protruding bottom electrode and methods of forming the same
  • Ferroelectric memory devices having a protruding bottom electrode and methods of forming the same
  • Ferroelectric memory devices having a protruding bottom electrode and methods of forming the same

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Embodiment Construction

[0021] The present invention will be described more fully hereinafter with reference to the accompanying drawings, which show embodiments of the invention. However, the invention can be implemented in many ways and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the description of the figures, the same reference numerals designate the same elements.

[0022] It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be direct...

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Abstract

A ferroelectric memory device and methods of forming the same are provided. Forming a ferroelectric device includes forming an insulation layer over a substrate having a conductive region, forming a bottom electrode electrically connected to the conductive region in the insulation layer, recessing the insulation layer, and forming a ferroelectric layer and an upper electrode layer covering the bottom electrode over the recessed insulation layer. The bottom electrode protrudes over an upper surface of the recessed insulation layer.

Description

[0001] Cross-references to related patent applications [0002] This patent application claims priority from Korean Patent Application No. 10-2007-0002089 filed with the Korean Intellectual Property Office on January 8, 2007 based on 35 U.S.C. §119, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device, and more particularly, the present invention relates to a ferroelectric memory device and a method of forming the same. Background technique [0004] Generally, semiconductor memory devices can be classified into volatile memory devices and nonvolatile memory devices. Volatile memory devices lose data when power is cut off, while non-volatile memory devices retain data even when power is cut off. [0005] A ferroelectric memory device or a ferroelectric random access memory (FRAM) device is a nonvolatile memory device that does not lose stored data due to the spontaneous polarizatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L27/115G11C11/22H10B69/00
CPCH01L27/11507H01L27/11502H01L28/82H01L28/55H10B53/30H10B53/00H01L27/105
Inventor 崔锡宪洪昌基李埈泳金重铉尹煋圭林钟欣
Owner SAMSUNG ELECTRONICS CO LTD