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CMOS image sensor and method for manufacturing the same

An image sensor and dopant technology, applied in the field of CMOS image sensor and its preparation, can solve the problems of increased leakage current, etc.

Inactive Publication Date: 2010-07-14
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if image 3 As shown, since the difference between the energy levels of the photodiode PD and the transfer transistor Tx is smaller, the leakage current increases when the transfer transistor Tx is turned off

Method used

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  • CMOS image sensor and method for manufacturing the same
  • CMOS image sensor and method for manufacturing the same
  • CMOS image sensor and method for manufacturing the same

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Embodiment Construction

[0021] reference example Figure 4 , the CMOS image sensor according to the embodiment includes a transfer transistor. The CMOS image sensor also includes a P-type epitaxial layer 104 , a device isolation film 106 , a gate 110 , an n-type diffusion region, a gate spacer 112 , an n+-type diffusion region 116 and a potential well region 120 . A P-type epitaxial layer 104 is formed on the P+-type semiconductor substrate 102 . The device isolation film 106 is formed in the device isolation region of the semiconductor substrate defined by the photodiode region PD, the active region, and the device isolation region.

[0022] A gate electrode 110 is formed over the epitaxial layer 104 for the transfer transistor with a gate insulating layer 108 interposed therebetween. An n-type diffusion region 114 is formed in the epitaxial layer 104 of the photodiode region PD. Gate spacers 112 are formed on both sidewalls of the gate electrode 110 . The n+-type diffusion region 116 is formed ...

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Abstract

The present invention discloses a CMOS image sensor capable of preventing a transfer transistor from leaking current as well as preparation method thereof. The present invention relates to a complementary metal oxide silicon (CMOS) image sensor containing transfer transistor. The transfer transistor includes an epitaxy layer forming on a semiconductor substrate defining by a light-sensitive diodearea, an active area and a device isolated area. It is able to form device isolated film in the device isolated area. It is also able to form a grid on the epitaxy layer for the transfer transistor, between which inserting grating isolated layer. It is able to form a first dopant diffusion area by means of injecting a first dopant ion into the epitaxy layerof the photodiode area. It is also possible to form a potential wall area in the first dopant diffusion area nearby the grid. And it is able to form a second dopant diffusion area by means of injecting a second dopant ion into the epitaxy layer of a lateral surface floating diffusion area isolated by the grid.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2006-0137543 filed on December 29, 2006, which is incorporated herein by reference in its entirety. technical field [0002] The present invention relates to a CMOS image sensor, in particular to a CMOS image sensor capable of preventing leakage current of a transfer transistor (transfer transistor) and a preparation method thereof. Background technique [0003] Semiconductors convert optical images into electrical signals. Image sensors may be classified as Complementary Metal-Oxide-Silicon (CMOS) image sensors or Charge Coupled Device (CCD) image sensors. Compared with CMOS image sensors, CCD image sensors have better light sensitivity and lower noise. However, CCD image sensors may be more difficult to fabricate as highly integrated devices and have higher power consumption. [0004] On the contrary, compared with CCD image sensors, CMOS image sensors have a simpler manufacturing process, hig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/822H01L21/336H01L29/06H01L29/78H01L27/146
CPCH01L27/14609H01L27/14689H01L27/146
Inventor 任劤爀
Owner DONGBU HITEK CO LTD