High frequency switch circuit

一种高频开关、开关电路的技术，应用在电子开关、电气元件、脉冲技术等方向，能够解决不能够获得信号隔离性能、开关电路独立提供电源、电路的元件数量巨大等问题，达到节省芯片面积、低成本、降低功率消耗的效果

Inactive Publication Date: 2008-07-23
PROTERIAL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This creates a problem that an independent power supply is required for the switching circuit, or that the number of components constituting the circuit is large
[0014] Furthermore, in Patent Document 4, there is a problem that, in the booster circuit of any of the proposed systems (FIG. 12, FIG. 13, FIG. 14 in Patent Document 4), even when the external control voltage is set low In case, when a high-power high-frequency signal is applied to the high-frequency detection terminal, the potential due to the rectification action is added to increase the output voltage, and thus sufficient signal isolation performance cannot be obtained

Method used

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Embodiment 1

[0052] Fig. 2 is a circuit diagram of a high frequency switching circuit as a first embodiment according to the present invention. In the figure, reference numerals 114 and 115 respectively denote an input terminal 114 and an output terminal 115 of a high-frequency signal in the high-frequency switching circuit. Reference numerals 101 and 102 denote depletion type field effect transistors, and reference numerals 121a to 121d denote resistors. An input terminal 114 and an output terminal 115 of a high-frequency signal are supplied by a switch circuit including a depletion field effect transistor 102 for performing switching between a connected state and a disconnected state of a high-frequency signal path.

[0053] Note that, in the present embodiment, the resistor 121a used in the control voltage generating circuit 100 is a resistor made of a tantalum nitride thin film. Also, reference numerals 124a and 124b denote capacitors serving as sufficiently small impedance in a high ...

Embodiment 2

[0067] Fig. 4 is a circuit diagram of a high-frequency switching circuit as a second embodiment of the present invention. Note that in this figure, the same elements as those shown in FIG. 2 are denoted by the same reference numerals and symbols. In this high-frequency switching circuit, the gate of the field effect transistor 101 used in the control voltage generating circuit 100 is grounded through a resistor 121e.

[0068] Since the gate of the field effect transistor 101 is grounded through the resistor 121e in this way, even when an excessively high voltage is input from the external control signal input terminal 111, a current caused by the excessively high voltage must flow through the resistor 121a and the resistor 121e. , thereby suppressing the voltage applied to the field effect transistor 101 (the current flowing through the transistor).

[0069] In this way, the field effect transistor 101 is protected over a certain range with respect to the overvoltage input, a...

Embodiment 3

[0074] FIG. 5 is a circuit diagram of a high-frequency switching circuit as a third embodiment of the present invention. In this embodiment, a single pole double throw (SPDT) circuit is implemented. Note that also in FIG. 5 , the same elements as those shown in FIG. 2 are denoted by the same reference numerals and symbols. However, in conformity therewith, the high-frequency switching circuit is provided with two control voltage generating circuits (100a, 100b), for example, as in the external control signal input terminals 111a and 111b, suffixes a and b are respectively attached to the control voltage generating circuits of multiple components.

[0075] Hereinafter, the operation of the high-frequency switch circuit according to the present embodiment will be described. The high frequency switching circuit according to the present embodiment includes two control voltage generating circuits 100a and 100b, and applies complementary external control voltages from logic circui...

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PUM

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Abstract

A high-frequency switch circuit comprises a control voltage generator (100). The control voltage generator (100) includes a depletion type field effect transistor (101), an external control signal input terminal (111), an internal control voltage output terminal (112), and a power receiving terminal (113) of the control voltage generator. The gate of the field effect transistor (101) is grounded, and the source and the drain thereof are electrically connected to the external control signal input terminal (111) and the power receiving terminal (113), respectively. The internal control voltage output terminal (112) is connected to an electrical connection path between the drain of the field effect transistor (101) and the power receiving terminal (113).

Description

technical field [0001] The present invention relates to a high frequency switch circuit, which is constituted by using, in a switch circuit for switching a connection path of a high frequency signal, a depletion type field effect transistor such as a high electron mobility transistor circuit. Background technique [0002] In a radio communication apparatus that switches transmission and reception in a time-divisional manner, it is necessary to switch connections between the antenna and the transmission / reception circuit. Alternatively, in a terminal using a plurality of frequency bands, generally a plurality of transmission / reception circuits are incorporated for each frequency band, and thus it is necessary to switch signal paths between the antenna and the plurality of transmission / reception circuits. Alternatively, in a radio communication device employing diversity reception or a MIMO (Multiple Input Multiple Output) system, it is necessary to switch signal paths betwee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687
CPCH03K17/693H03K2017/0806H03K2017/6875H03K17/687
Inventor 杉山雄太小屋茂树丘维礼
Owner PROTERIAL LTD
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