Semiconductor device comprising a barrier insulating layer and related method

Abstract

The present invention provides a semiconductor device including a blocking insulating layer and a manufacturing method thereof. The semiconductor device includes: a semiconductor substrate including a plurality of active regions, wherein the active regions are defined by a device isolation layer and arranged along a first direction; a plurality of bit line electrodes connected to the active regions, each of which The bit line electrodes extend along the second direction; and a plurality of first blocking insulating layers. Each of the first blocking insulating layers extends along a third direction, at least one of the first blocking insulating layers is disposed on a corresponding first portion of the device isolation layer between two of the active regions. , the two active regions are adjacent along a first direction, and the first direction and the second direction are different from each other.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices and methods of manufacturing the semiconductor devices. In particular, embodiments of the present invention relate to a semiconductor device including a blocking insulating layer and a method of manufacturing the semiconductor device. Background technique [0002] Each size of patterns in a semiconductor device can be reduced to increase the integration degree of the semiconductor device. At some point, however, the limits of what can be achieved using photolithography to form finer patterns are being reached. For example, process margins of contact plugs used in memory devices are decreasing. That is, the size of the contact plugs is reduced, and the separation pitch between the contact plugs is reduced. Therefore, a bridge problem may occur between storage node layers connected to the contact plugs, and the reliability of the storage device may be greatly reduced. [0003] Furth...

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Problems solved by technology

Therefore, a bridging problem will occur between the storage node layers connected to the contact plug, and the reliability of the storage device will be greatly reduced.

[0003] Furthermore, it is even more difficult to form a compactly arranged contact plug or storage node layer in a semiconductor device having an interconnection line (such as a bit line electrode or a gate electrode) disposed near the contact plug or storage node layer.

The difficulty is greater because in this case the possibility of forming a bridge between the interconnection line and the contact plug or between the interconnection line and the storage node increases

Therefore, very expensive equipment for manufacturing semiconductor devices is required to form contact plugs or storage node layers with finer patterns

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