Photoresist mask forming method

A technology of photoresist and photoresist layer, which is applied in the direction of optics, optomechanical equipment, microlithography exposure equipment, etc., can solve the problems of etching size deviation, rework, excessive development, etc., and achieve the amount of change Reduced effect

Inactive Publication Date: 2011-07-06
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the inspection fails, that is, under-exposure or over-exposure causes under-development or over-development, which may cause deviation in etching size, rework is required

Method used

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Embodiment Construction

[0045] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0046]In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sys...

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Abstract

A method for form photoresist mask comprises providing a basement, cleaning the basement with acidity cleaner, coating photoresist layer on the cleaned basement, patterning the photoresist layer, detecting the patterned photoresist layer, using the patterned photoresist layer as photoresist mask in case of ensuring the patterned photoresist layer satisfy the need of the product, carrying out reworking operation until ensuring the patterned photoresist layer satisfy the need of the product in case of ensuring the patterned photoresist layer not satisfy the need of the product. The reworking operation comprises the following steps removing the photoresist layer, cleaning the basement removed photoresist layer with acid cleaner, painting photoresist layer, patterning and detecting. The process can ensure the variation of line width dimension of photoresist mask experiencing reworking operation is reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for forming a photoresist mask. Background technique [0002] The patterned photoresist layer is the basic mask in the manufacturing process of integrated circuits, and its patterning accuracy will have an important impact on the accuracy and performance of integrated circuit products. [0003] In the actual production process, line width detection is required after patterning the photoresist layer, and only the patterned photoresist layer that passes the inspection can be used as a mask layer for the subsequent etching process. If the detection fails, that is, under-exposure or over-exposure causes under-development or over-development, which may cause deviation in etching size, rework is required. The rework process is to re-coat, pattern and detect the photoresist layer after removing the patterned photoresist layer. [0004] figure 1 For i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/20G03F7/004G03F7/00G03F7/16
Inventor 孟兆祥吴永玉
Owner SEMICON MFG INT (SHANGHAI) CORP
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