Method for fabricating landing plug of semiconductor device
A technology for connecting plugs and semiconductors, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., and can solve problems such as incomplete coverage of double-line word lines and difficulty in forming patterns.
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[0015] 1a is a schematic view showing a process for forming a connection plug contact in a single exposure process using an I-type mask, and FIG. 1b is a cross-sectional view taken along line XX' of FIG. 1a.
[0016] Referring to FIGS. 1a and 1b , connection plug contacts are formed on a semiconductor substrate 100 (see FIG. 1b ) using an I-type mask 130 (see FIG. 1a ). Referring to FIG. 1 b , the interlayer insulating film between the gate 120 and the dummy gate 125 is once opened by using an I-type mask, so as to form contacts 140 in the word line intervals on the active region 110 defined by the isolation film 105 . That is, regions other than the I-type connection plug contact mask 130 are opened. However, when forming a pattern with a half-pitch smaller than 30 nm, it is difficult for the I-type mask 130 to cover the gate 120 (such as a double-lined word line) and spacers on both sides. Therefore, contacts are formed between the active region 110 and both ends of the act...
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