Molecular level memory unit for enclosed type double-layer nanometer carbon tube

Abstract

The invention relates to a closed type double-layer nanometer carbon tube molecular level storage unit which comprises a double-layer nanometer carbon tube with an inner tube and an outer tube, whichare all closed; the double-layer nanometer carbon tube is horizontally arranged on an insulated substrate; the length of the inner-layer carbon tube is less than the length of the outer-layer carbon tube; a first electrode and a second electrode are deposited on the front end and the rear end of the double-layer nanometer carbon tube; the planes of the electrodes are vertical to the axial direction of the carbon tube; under the drive of voltage between the first electrode and the second electrode, the inner-layer carbon tube can do noncontact motion in the outer-layer carbon tube; a third electrode and a fourth electrode are deposited on the left side and the right side of the front end of the double-layer nanometer carbon tube; a fifth electrode and a sixth electrode are deposited on theleft side and the right side of the rear end of the double-layer nanometer carbon tube; and the planes of the electrodes are parallel with the axial direction of the carbon tube. Through the motion between the molecules of the carbon tube, the technical proposal utilizes the unique electrical and mechanical properties of the nanometer carbon tube, designs a bistable molecule storage unit, is easyto assembly and has high integration density, long working service life and nonvolatility.

Description

technical field [0001] The invention relates to a storage unit, in particular to a closed double-layer carbon nanotube molecular-level storage unit. Background technique [0002] Based on the silicon-based storage technology of the Top-Down idea, the geometric size of chip components cannot be reduced infinitely. When it reaches the nanometer level, the current silicon-based storage semiconductor technology will fail because it has many fundamental problems that are difficult to solve. For example, chip overheating, electronic leakage, etc. Therefore, Moore's Law predicts that silicon-based storage technology will reach its limit in the next 10-15 years. [0003] For this reason, scientists from various countries have begun to find various other methods to solve these fundamental technical problems. Among them, based on the bottom-up research idea, the research on storage technology directly from the atomic and molecular scales has taken a dominant position. This research ...

AI Technical Summary

Problems solved by technology

This research has attracted the attention of companies such as Intel, but this structure mainly has the following defects: (1) It is difficult to arrange two single-layer carbon nanotubes vertically and orthogonally and maintain a certain vertical distance; ( 2) This mechanical high-frequency periodic deformation may cause the carbon tube to fall off or be damaged, reducing the working life; (3) This storage unit is volatile, and the stored data will also be lost after the power is cut off

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