Silicon based single electron device having double quantum point contact construction and producing method thereof

Abstract

The invention discloses a silicon single electron device with a double-quanta point contact structure. The silicon single electron device comprises a silicon source electrode conduction step, a silicon drain electrode conduction step, a silicon coulomb island, and a side grid electrode ohmic conduction step, which are made on an SOI substrate from silicon on the top layer. The silicon coulomb island is arranged between the silicon source electrode conduction step and the silicon drain electrode conduction step and is connected with the two steps through quanta point contacts, in a shape like the Chinese character pin. The side grid electrode ohmic conduction step at one side of the silicon coulomb island is used to control the charge storage of the silicon coulomb island. The silicon single electron device further comprises a source metal electrode arranged on the silicon source electrode conduction step, a drain metal electrode arranged on the silicon drain electrode conduction step, and a side grid metal electrode arranged on the side grid electrode ohmic conduction step. The invention also discloses a method for fabricating such a silicon single electron device which has a double-quanta point contact structure. The silicon single electron device is capable of steadily controlling single electron transport in batches.

Description

technical field [0001] The invention relates to the technical field of single-electron transport in nanoelectronics, in particular to a silicon-based single-electron device with a double-quantum point contact structure and a manufacturing method thereof. Background technique [0002] Nanoelectronics is one of the important fields of nanotechnology, and it is the continuous development and extension of microelectronics to the microscopic field. At present, the feature size of VLSI has entered the nanoscale (<100nm) range, and the impact of quantum effects has become more and more prominent in the process of scaling down CMOS devices. The nano-solid structure produced by single atomic layer thin film epitaxial growth technology, tunnel probe technology and advanced photolithography technology shows peculiar quantum effects. On the basis of these effects, people have invented resonant tunneling devices and single-electron devices. , quantum dot devices and other new quantum...

AI Technical Summary

Problems solved by technology

The current planar nanofabrication technology is almost difficult to uniformly control the size and even the number of quantum dots of each silicon-based single-electron transistor with this precision, so the performance of the current silicon-based single-electron transistor is almost difficult to obtain good consistency and stability

Images