Mask for semiconductor device and patterning method using the same

A pattern and mask technology, applied in the field of masks of semiconductor devices, can solve problems such as difficulty in optimizing the optical proximity correction pattern 10
CN101373327AInactive Publication Date: 2009-02-25DONGBU HITEK CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
DONGBU HITEK CO LTD
Publication Date
2009-02-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a mask for a semiconductor device and a patterning method using the same. The mask for a semiconductor device includes a first mask including main patterns constituted by a plurality of split patterns arranged at intervals, and a second mask including first auxiliary patterns disposed corresponding to regions among the plurality of split patterns, and second auxiliary patterns disposed corresponding to edge parts of the plurality of split patterns. The plurality of split patterns may be formed as triangles or squares. Because the main patterns of the first mask is arranged in space, the patterned marginal portion can be more accurate, and the pattern can be more close to match the original form; by independently controlling the main pattern and assistant pattern, the optical neighborhood correction can be optimized, and the optical resolution can be improved by using the first mask and second mask even if the pattern dimension is below 90nm.
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Description

[0001] This application claims priority under US Code 119-35 of Korean Patent Application No. 10-2007-0084931 (filed August 23, 2007), the entire contents of which are incorporated herein by reference. technical field

[0002] The present invention relates to a mask for a semiconductor device and a patterning method using the mask, and more particularly to a mask for a semiconductor device capable of improving accuracy of line resolution and a pattern using the mask method. Background technique

[0003] Mask patterning techniques can have a serious impact on the accuracy of patterns formed on semiconductor substrates. In order to improve the accuracy of patterns, masks used for semiconductor devices should be precisely designed so that the brightness of light passing through the masks can be properly adjusted. For this purpose, there is an increasing need to develop new photosensitizers, scanners equipped with high numerical aperture lenses, and improved masking techniques ...

Claims

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