Plasmer processing device, plasmer processing method and storage medium

Abstract

The invention provides a plasma processing device, a plasma processing method and storage media. In the plasma processing device using a plurality of high frequency power source to perform plasma process, when overlarge reflection waves are generated in at least one high frequency power source, output of the high frequency power source is stopped, meanwhile the output of the other high frequency power source is stopped instantly. The plurality of high frequency power sources respectively comprise: an oscillator, a communication part, an output stopping part for receiving stopping signals and stopping the output of the oscillator through the communication part, an output stopping part of at least one of the high frequency power source in the plurality of high frequency power sources monitors high frequency output from the high frequency power oscillator, the output of the oscillator is stopped in abnormity of high frequency, meanwhile, stopping signals are output to the communication part. In addition, in order to transmit the stopping signals from the monitor part to the other high frequency power source, the communication part of at least one high frequency power source and the communication part of the other high frequency power source are connected.

Description

technical field [0001] The present invention relates to a plasma processing device, a plasma processing method, and a storage medium that convert a processing gas into plasma by high-frequency current, and perform processing such as etching on an object to be processed by the plasma. Background technique [0002] In the flat-panel manufacturing process of semiconductor devices or liquid crystal display devices, etc., plasma etching equipment or plasma CVD film formation equipment, etc. body treatment device. [0003] As the plasma processing apparatus, for example, a parallel plate capacitively coupled plasma processing apparatus is used. Figure 8 (a) is a diagram schematically showing the plasma processing apparatus, and an upper electrode 11 and a lower electrode 12 on which a substrate 10 to be processed are placed are provided in a processing container. For example, in a so-called lower dual-frequency type device, the lower electrode 12 is connected to a high-frequency...

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Problems solved by technology

Also, as described above, during this period, the state of the plasma P becomes unstable, as Figure 8 The region where the ion layer is formed on the surface of the processed substrate 10 shown by h2 in (b) is narrowed, and an abnormal discharge is generated to the processed substrate 10, and a current flows to the processed substrate 10, which may damage the processed substrate 10.

[0008] Moreover, Patent Document 2 describes a circuit for stopping oscillation of a high-frequency power supply based on the reflected wave power value reflected by the high-frequency power supply, but it cannot solve the problem of the present invention. The problem

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