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Crystal growth apparatus and method under vibration field

A technology of crystal growth and vibration field, applied in the field of material science, to achieve the effect of improving crystal quality and yield

Active Publication Date: 2012-01-25
江苏先进无机材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the late start of the development of crystal growth technology under vibration field, the technology is still immature, and most of the researches are related to the progress of numerical simulation calculation, while the experimental research on crystal growth under vibration field is relatively few.

Method used

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  • Crystal growth apparatus and method under vibration field
  • Crystal growth apparatus and method under vibration field
  • Crystal growth apparatus and method under vibration field

Examples

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Embodiment Construction

[0035] The present invention is described below by means of examples, but not limited to the following examples.

[0036] Example bismuth silicate (Bi 12 SiO 20 , BSO) single crystal growth.

[0037] The components of the device are figure 1 The structures shown are assembled and fixed. The sample ampoule 3 containing the BSO raw material is passed through the furnace chamber of the furnace body 1, and its lower end is then fixedly mounted on the vibration generator 4 through threads. Start the transmission mechanism 2, drive the furnace body 1 to move axially to the calculated set initial position (depending on the temperature field distribution, the melting point of the material and the position of the seed crystal material), and close the transmission mechanism 2. Then, supply power to the furnace body 1 for heating, and keep it warm after reaching the growth temperature according to the set procedure. Then, turn on the transmission structure 2 again, set the moving sp...

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Abstract

The invention relates to a crystal growing device under a vibration field, and a growing method. The growing device comprises a furnace body (1), a driving mechanism (2), a sample ampoule (3), a vibration generator (4), a bracket (5), a driving rod (6) and a guiding rod (7); wherein, the furnace body (1) is placed vertically, the sample ampoule (3) vertically passes through the furnace body (1) and moves in the furnace body (1) along vertical directions, and the lower end of the sample ampoule (3) is fixedly installed on the vibration generator (4); the driving mechanism (2) is connected withthe furnace body (1) by the driving rod (6) and drives the furnace body (1) to move up and down along the axial direction; the furnace body (1) is sheathed and installed on the guiding rod (7) in a penetrating manner and moves up and down along the axial direction of the guiding rod (7), and the driving mechanism (2) and the guiding rod (7) are both installed on the fixing bracket (5). The deviceintroduces an axial externally-applied vibration field in the crystal growing process, which can effectively control the convection in melts, change the shape of a solid-liquid interface, and improvethe crystal quality and yield by searching for optimal processing parameters.

Description

technical field [0001] The invention relates to a crystal growth device and a growth method thereof under a vibrating field, belonging to the field of material science. Background technique [0002] Melt crystal growth is an important crystal growth technology and a major means of preparing high-quality semiconductor and laser dielectric crystals, and plays a pivotal role in modern science and technology applications. The crystal growth process is essentially a dynamic coupling effect of heat output, mass transport, and interface growth process, and this transport process is limited by the convective effect during the crystal growth process. [0003] In order to study the mechanism of crystal growth, improve the crystal growth process, improve the crystal quality, and apply the theory of hydrodynamics to the study of crystal growth, the research on the convective effect in the crystal growth process is quite active in recent years. [0004] Generally speaking, convection i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B30/06C30B11/00
Inventor 刘岩艾飞潘秀红张英金飞高国忠冯楚德金蔚青
Owner 江苏先进无机材料研究院
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