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Method and equipment for reducing frequency memory effect of RF power amplifier

A power amplifier and memory effect technology, which is applied in the field of reducing frequency memory effect, can solve problems such as leakage voltage changes, and achieve the effect of simple and fast convergence speed

Inactive Publication Date: 2009-04-22
TELEFON AB LM ERICSSON (PUBL)
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] As a result, the drain voltage on the load matching network becomes frequency dependent, causing variations in the drain voltage

Method used

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  • Method and equipment for reducing frequency memory effect of RF power amplifier
  • Method and equipment for reducing frequency memory effect of RF power amplifier
  • Method and equipment for reducing frequency memory effect of RF power amplifier

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Embodiment Construction

[0042] figure 1 Explain the nonlinear input and output signal characteristics of the power amplifier. At low input signal amplitudes, the amplifier is almost linear, but at higher amplitudes, it becomes more and more nonlinear until it saturates. This nonlinearity looks like a broadened spectrum around the expected amplified signal (and like undesired in-band components of the signal), such as figure 2 Shown. In order to overcome this non-linear problem, the power amplifier is often connected to the linearization device. Among all linearization techniques, digital predistorter is the most commonly used. The predistorter is like image 3 Shown are the functional blocks placed before the PA to provide an undistorted amplified signal at the output of the amplifier. in image 3 , The predistorter 10 is placed before the power amplifier 9. Let the predistortion amplifier 10 and the amplifier 9 form a system 11, where the output y2 of the predistorter is the input of the amplifier, a...

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Abstract

The present invention relates to a predistorter for reducing memory effects in RF power amplifiers. The invention also relates to a method for reducing memory effects in RF power amplifiers and to a base station including such a predistorter. A predistorter according to the invention includes first means (1) for generating a first signal component, which is an estimate of a drain current of said amplifier, which means (1) for generating said first signal component comprises a linear filter, second means (8) for generating a second signal component as a function of said first signal component and at least one first gain function; ; third means (9) for generating a third signal component as a function of a conjugate of said first signal component and at least one second gain function, and fourth means (7) for combining at least said second signal component and said third signal component to form an output signal. The output signal from the predistorter is further used as input to the power amplifier, which when amplified reduces the memory effects of the amplifier.

Description

Technical field [0001] The present invention generally relates to power amplification technology, and in particular to a method and device for reducing frequency memory effect in (RF) power amplifiers. Background technique [0002] Power amplifiers are an indispensable element in communication systems, and it is known to add more or less distortion to the signals designed to amplify them, especially in multi-carrier telecommunication systems (such as WCDMA) that are particularly sensitive to distortion. The reason for this is that the power amplifier has non-linear input-output signal characteristics. This results in a broadened spectrum around the desired amplified signal, as well as undesired in-band components of the signal, which results in poor system performance. [0003] In order to overcome this distortion problem or to reduce non-linear effects, multiple linearization schemes can be used. One such linearization scheme is called feedforward, in which the signal is injecte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/32H03F3/21
CPCH03F2201/3224H03F3/187H03F1/3241H03F2201/3209H03F1/0288
Inventor M·克林伯格T·方登
Owner TELEFON AB LM ERICSSON (PUBL)
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