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Low-temperature co-fired microwave dielectric ceramic materials and preparation method thereof

A microwave dielectric ceramic and low-temperature co-firing technology, which is applied in the field of low-temperature co-firing microwave dielectric ceramic materials and their preparation, can solve the problems of poor microwave and dielectric properties, loss of microwave dielectric properties, etc., and achieve chemical composition and manufacturing process. Simple, Inherent Microwave Performance Improvements

Active Publication Date: 2013-04-03
DONGGUAN HUAKE ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, because the microwave and dielectric properties of the general glass phase are quite poor, the microwave ceramic material after adding the glass phase can be sintered at a lower temperature, but the microwave dielectric properties of the original main material will be greatly lost

Method used

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  • Low-temperature co-fired microwave dielectric ceramic materials and preparation method thereof
  • Low-temperature co-fired microwave dielectric ceramic materials and preparation method thereof
  • Low-temperature co-fired microwave dielectric ceramic materials and preparation method thereof

Examples

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preparation example Construction

[0030] The invention provides a method for preparing a low-temperature co-fired microwave dielectric ceramic material, the specific steps of which are as follows:

[0031] (a) Pure phase Ba 5+y (Nb 1-k mn k ) 4 o 15 powder production

[0032] industrial grade powder BaCO 3 (99.9%), Nb 2 o 5 (99.7%), MnO 2 (99.5%) according to the molecular formula Ba in a non-stoichiometric dosage ratio 5+y (Nb 1-k mn k )4 o 15 Preparation, where 05 Nb 4 o 15 After the crystalline powder is formed, deionized water and YTZ balls are added in proportion to the second ball milling for 24 hours. After drying at 120°C, it is ground, sieved, granulated, and pressed into tablets with a uniaxial pressure of 1 ton. A green body with a height of 5 mm and a diameter of 10 mm was sintered at 1350°C to 1450°C (holding temperature for 2 to 4 hours), and the material properties were analyzed.

[0033] (b) Pure phase Ba 1+z Nb 2 o 6 (0≤z≤0.3) powder production

[0034] According to the abov...

Embodiment 1

[0055] First, the microwave dielectric ceramic Ba 5+y (Nb 1-k mn k ) 4 o 15 The main powder is sintered at 1350°C to 1450°C according to different raw material ratios (holding temperature for 2 to 4 hours), and the material properties are analyzed. The characteristics are shown in Table 1 and Table 2 below:

[0056] Table 1: Ba 5+y Nb 4 o 15 Microwave Dielectric Properties of Ceramics

[0057]

[0058] Table 2: Ba 5 (Nb 1-k mn k ) 4 o 15 Microwave Dielectric Properties of Ceramics

[0059]

[0060] The above results show that the density and electrical properties of the ceramics increase with the increase of Ba content. When y=0.03, the sintering temperature is 1425 ° C, and the temperature is kept for 2 hours, the density and electrical properties of the ceramic body reach the highest value; the density of the ceramic body is It can reach more than 95% of theoretical density (T.D.%), K=40~41, Q*f>40000, τ f =60ppm / ℃; and the addition of Mn has no obvious imp...

Embodiment 2

[0061] Ba 5.03 Nb 4 o 15 low temperature sintering

[0062] Generally, there are two types of sintering aids used to reduce the sintering temperature, one is glass with a low melting point, and the other is a metal oxide with a low melting point. Although adding glass can reduce the sintering temperature, it will also reduce the dielectric properties of the material, so It is necessary to add some oxides with low melting point to reduce the sintering temperature while maintaining excellent dielectric properties.

[0063] The metal oxides commonly used to reduce the sintering temperature are B 2 o 3 , CuO, ZnO, V 2 o 5 etc., due to BaO, B 2 o 3 There is a eutectic phase reaction with CuO, so the secondary phase BaCu(B 2 o 5 ), and the addition of BaO can improve the relationship with Ba 5.03 Nb 4 o 15 Wetting behavior between, so the liquid phase BaCu (B 2 o 5 ) sintered on Ba 5.03 Nb 4 o 15 material, and add B 2 o 3 -CuO, ZnO-B 2 o 3 and other powders to...

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Abstract

The invention relates to a low temperature co-fired ceramic microwave dielectric material and a method for preparing the same. The material proportion is as follows: (1-x)Ba5+y(Nb1-kMnk)4O15-xBa1+zNb2O6 is added with a burning auxiliary agent which is 0.3 to 2.8 weight percent of the total materials, wherein the burning auxiliary agent is boron oxide, the boron oxide and zinc oxide, the boron oxide and copper oxide, the boron oxide and barium oxide, or the barium oxide, the boron oxide and the copper oxide; and x is more than or equal to 0 and less than 1, y is more than 0 and less than or equal to 0.3, z is more than or equal to 0 and less than or equal to 0.3, and k is more than or equal to 0 and less than or equal to 0.1. With the addition of Ba1+zNb2O6 and small amount of low melting point oxide, the sintering temperature of the low temperature co-fired ceramic microwave dielectric material is lowered to about 900 DEG C to obtain excellent microwave dielectric properties: the dielectric constant is between 39 and 42, the microwave characteristic is more than 15,000, and the resonant frequency temperature coefficient is about 30; and the material can be applied to the manufactures of microwave devices such as low temperature co-fired ceramic systems, multi-layer dielectric resonators, microwave antennas, filters.

Description

technical field [0001] The invention relates to a microwave dielectric ceramic material and a preparation method thereof, in particular to a method of reducing the eutectic point between materials by adding oxides with a low melting point, thereby greatly reducing the sintering temperature of the dielectric material, while still maintaining its superiority. A low-temperature co-fired microwave dielectric ceramic material with microwave properties and a preparation method thereof. Background technique [0002] The rapid progress of IC integration technology has led to the successful integration of active components used in wireless communications, while passive components are still used in circuits with a single function, making the difference in the number of components on the circuit board between the two increasingly large. Take a mobile phone as an example, passive components account for 70% of the cost, and the volume ratio is as high as 80%. In order to achieve the goa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/495C04B35/622
Inventor 汪宏周焕福姚熹张瑞宗陈惠如温仲凯
Owner DONGGUAN HUAKE ELECTRONICS
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