Capacitive sensor

A capacitive sensor and moving electrode technology, which is applied to instruments, measuring devices, measuring acceleration, etc., can solve the problem of difficulty in forming enhanced detection sensitivity, and achieve the effect of reducing sensitivity, uniform cross-sectional shape, and enhancing sensitivity.

Active Publication Date: 2012-08-22
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When the substrate is processed by crystal anisotropic etching, since the mass portion has a certain degree of mass, there is a problem that it is difficult to form a mass portion that enhances detection sensitivity

Method used

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  • Capacitive sensor

Examples

Experimental program
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Effect test

no. 1 example

[0037] Such as figure 2 As shown, a capacitive sensor 1 (hereinafter, simply referred to as sensor 1) as a first embodiment of the present invention has a semiconductor layer 2 obtained by processing a semiconductor substrate, while insulating layers 20 and 21 such as a glass substrate are bonded by anodic bonding ( anodic bonding) on ​​the front and rear sides, relatively shallow recessed portion 22 is formed in the bonding surface between the semiconductor layer 2 and the insulating layers 20 and 21, ensuring the insulating properties of the semiconductor layer 2 and the movable electrode 5 Ease of movement. In this embodiment, the bonding surface between the semiconductor layer 2 and the insulating layer 20 is provided with the recessed portion 22 on the side of the semiconductor layer 2, and the bonding surface between the semiconductor layer 2 and the semiconductor layer 2 is provided with the concave portion 22 on the semiconductor layer 2 side. The recessed portion 22...

no. 2 example

[0069] The sensor 1 as the second embodiment of the present invention differs from the first embodiment in the structure of the sensor 1 in that beam portions 4 and 4 are not provided at longitudinal ends such as Figure 9 The stress adjustment unit 30 is shown. In the second embodiment, as Figure 10 As shown in (a), the semiconductor layer 2 is bonded to the insulating layer 20, and before the gap 10 is formed, the recessed portion 22 is formed by various etching processes such as wet etching and dry etching. After cutting the semiconductor layer 2 by etching, the insulating layer 20 as the glass substrate is as Figure 10 The connection shown in (b) is processed by vertical etching, so as to form the Figure 10 Gap 10 shown in (c). After the recessed portion 22 is formed by an etching process, the stopper 13 is formed of an oxide film or an aluminum alloy.

[0070] By etching the semiconductor layer 2 which is the single crystal silicon substrate in this way, the recess...

no. 3 example

[0095] Second, will refer to Figure 17 and Figure 18 The structure of the sensor 1 as the third embodiment of the present invention will be described. In addition to the sensor 1 shown in the third embodiment can detect the physical value in the horizontal direction in the plane direction of the semiconductor layer 2, the sensor 1 shown in the third embodiment can detect the physical value in the vertical direction in the thickness direction of the semiconductor layer 2 The physical values ​​shown in the second embodiment are the same as for sensor 1.

[0096] Figure 17 is a plan view showing the semiconductor layer 2 of the sensor 1 . Such as Figure 17 As shown, the semiconductor layer 2 includes: a vertical direction detection unit 50A for detecting a physical value in the vertical direction by forming a gap 10 in the semiconductor substrate through a known processing technology, a horizontal direction detection unit 50B for detecting a physical value in the horizont...

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Abstract

A capacitive sensor includes a fixed electrode and a movable electrode that is movably supported by an anchor portion through a beam portion. The fixed electrode and the movable electrode are opposed to each other with a gap interposed therebetween, thereby constituting a detecting unit. A capacitance suitable for a size of the gap is detected to detect a predetermined physical value. At least one of an end of the beam portion connected to the anchor portion and an end of the beam portion connected to the movable electrode is provided with a stress moderating unit that moderates a stress. The stress moderating unit is a unit frame of the triangular shape which can be superposed on each other in many layers in the form of truss.

Description

technical field [0001] The present invention relates to a capacitive sensor that detects a predetermined physical value by detecting the capacitance between a fixed electrode and a movable electrode. Background technique [0002] Conventionally, there is a capacitive sensor in which a structure is formed having a movable electrode supported by a fixed part through an elastic member, the movable electrode can move closer or farther away from the fixed electrode according to an external force, and the capacitance between these electrodes is detected, thereby detecting Various physical values ​​such as acceleration and angular velocity (see Patent Document 1). As this capacitive sensor, there are known capacitive sensors that can detect a physical value in the direction of the vertical axis by one mass portion such as displacement of the physical value of acceleration (see Patent Document 2 and Patent Document 3). [0003] According to the capacitive sensor of Patent Document ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01P15/125
Inventor 古久保英一若林大介宫岛久和大渕正夫青木亮
Owner PANASONIC CORP
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