47results about How to "Uniform cross-sectional shape" patented technology

A capacitive sensor includes a fixed electrode and a movable electrode that is movably supported by an anchor portion through a beam portion. The fixed electrode and the movable electrode are opposed to each other with a gap interposed therebetween, thereby constituting a detecting unit. A capacitance suitable for a size of the gap is detected to detect a predetermined physical value. At least one of an end of the beam portion connected to the anchor portion and an end of the beam portion connected to the movable electrode is provided with a stress moderating unit that moderates a stress.

Disclosed are wellbore electric cables, and methods of manufacturing such cables, and in one aspect, methods of manufacturing wireline composite slickline cables. Some embodiments are methods which include preparing a slickline cable by providing an inner metallic tube containing at least one conductor (such as an optical fiber), disposing an epoxy / fiber composite strength layer substantially upon the outer periphery of the inner metallic tube, and exposing the combination of the inner metallic tube and composite strength layer to at least one technique for minimizing the variation in diameter and providing a substantially uniform circular cross-sectional shape of the combination. Further, an outer metallic tube is draw around the combination of the composite strength member and the inner metallic tube, to form a wellbore slickline. Cables prepared using such methods are also disclosed.

The invention is a staple comprising a bridge member having a spherical top surface and a spherical opposing bottom surface defining a constant thickness between and having a constant thickness and a first pair of a first leg and a second leg and a second pair of a first leg and a second leg where the first and second pair of legs are spaced apart along the axis and are joined to the bridge member.

The invention is a staple comprising a bridge member having a spherical top surface and a spherical opposing bottom surface defining a constant thickness between and having a constant thickness and a first pair of a first leg and a second leg and a second pair of a first leg and a second leg where the first and second pair of legs are spaced apart along the axis and are joined to the bridge member.

An object of the invention is to provide a processing method of a polishing pad for semiconductor wafer capable of forming a groove, a concave portion, a through hole and the like having a small surface roughness of the inner surface of the groove and the like of 20 mu m or less, a high dimensional accuracy and a uniform cross-sectional shape, and a polishing pad for semiconductor wafer. In the present processing method, a surface of a polishing pad comprising a water-insoluble matrix containing a crosslinked polymer and a water-soluble particle dispersed in the water-insoluble matrix is processed by cutting and the like. Additionally, when a groove and the like are formed, it is preferable that a polishing pad is placed on one surface side of a machining table having a sucking hole, the pad is fixed on the one surface side of the machining table by vacuuming sucking it from the other surface of the machining table, and then a groove and the like are formed.

A connector connection terminal that is less likely to buckle and in which cutting task is facilitated is provided. The present invention provides a connector connection terminal in which substantial height dimension from a rotation recess to an end face at an end on a rear surface side is set larger than a substantial height dimension from the rotation recess to an end face at an end on the front surface side, and an upper surface from the rotation recess to the end face at the end on the rear surface side is a flat surface.

A semiconductor structure comprises a semiconductor substrate and multiple layers of superfine silicon lines. Interface shapes of the multiple layers of superfine silicon lines are doubly controlled by a crystal orientation of the substrate and axial crystal orientations of the lines. A forming method of the semiconductor structure includes: forming a fin-shaped silicon island Fin and source drain areas at two ends of the silicon island via an etching technology; preparing a corrosion masking layer for silicon; forming multiple layers of superfine silicone lines. The semiconductor structure and the forming method there of have the advantages that the finally formed multiple layers of superfine silicon lines are uniform and controllable in positions and section shapes; self-stopping of aeolotropism corrosion, large technical windows and the silicon lines in different diameters on a same silicon slice are achieved; ICPECVD (inductively coupled plasma enhance chemical vapor deposition) is strong in narrow groove filling power, and no cavity is left when materials of a sacrificial layer and the corrosion masking layer are deposited; the lines smaller than 10nm in size can be prepared by combining an oxidization technology, requirements on key technologies for small-size devices are met; a processing method is implemented from top to bottom and compatible with a bulk silicon planar transistor technology, and technical cost is low.

The rotation of the band in relation to a boot to be fastened is prevented, so that reduction of the boot-fastening force is prevented, thereby preventing leakage of grease from a boot to be fastened, and so that boot-bands can be manufactured simply. An endless boot-fixing band 1 is formed as an endless ring, and is reduced in diameter by plastic deformation so as to fasten a boot by applying pressure onto said boot's outer surface. The boot band is formed entirely of an Al—Mg—Si alloy, and a surface-pressure-altering part 3, which changes the surface pressure for fastening the boot, is formed on the inner surface of the band.

A poly(trimethylene terephthalate) modified cross section yarn which comprises a poly(trimethylene terephthalate) being comprised of 95 mole % or more of trimethylene terephthalate recurring units and 5 mole or less of recurring units of another ester and having an intrinsic viscosity [eta] of 0.7 to 1.3 (dl / g), and has a modified cross section of trilobar type, said trilobar cross section having a perimeter the whole of which is a curve being convex towards the outside thereof or is composed of such a curve and a straight line. The above cross section yarn can be produced with suppressed attachment of a polymer to a spinneret and reduced staining, and also with reduced forming of fluff and thread breakage, and thus has allowed, for the first time, the commercial production with stability of a modified cross section yarn of the above-mentioned type. The cross section yarn is excellent, in particular, for clothing.

To simplify a structure and reduce costs. A shoe for a chain guide or for a chain tensioner arm is constructed. Here, a shoe (3) has a chain sliding surface (30) on which a chain slides. A locking protrusion such as a clip, a tab or a hook for locking the shoe (3) to a tensioner arm main body (2) of a chain tensioner arm (1) is not provided on an end surface of the shoe (3) or on a surface on the rear side of the chain sliding surface (30). Furthermore, the shoe (3) has a uniform cross-sectional shape over the whole length and extends linearly in the longitudinal direction.

A capacitive sensor includes a fixed electrode and a movable electrode that is movably supported by an anchor portion through a beam portion. The fixed electrode and the movable electrode are opposed to each other with a gap interposed therebetween, thereby constituting a detecting unit. A capacitance suitable for a size of the gap is detected to detect a predetermined physical value. At least one of an end of the beam portion connected to the anchor portion and an end of the beam portion connected to the movable electrode is provided with a stress moderating unit that moderates a stress. The stress moderating unit is a unit frame of the triangular shape which can be superposed on each other in many layers in the form of truss.