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46results about How to "Uniform cross-sectional shape" patented technology

Method for preparing plurality of layers of superfine silicon lines

The invention relates to a method for preparing a plurality of layers of superfine silicon lines. The method comprises the following steps: preparing a silicon etching masking layer; extending to form Fin and source drain regions on two ends of the Fin; and forming the plurality of layers of superfine silicon lines. The method has the advantages that the positions of the superfine lines can be accurately defined through the deposition of an atomic layer, and the controllability is good; the anisotropy etching on silicon stops automatically, a process window is large, and the sections of nano lines obtained by etching are uniform and smooth in appearance; the process for forming a plurality of layers of side wall etching masks by a method of firstly preparing masks and then extending a channel is simple, and the plurality of layers of side wall masks can be obtained only by one etching of the extension window regardless of the number of masking layers; the lines with sizes of less than 10nm can be prepared by combining oxidization technology, thus meeting the requirement of the key process of small-sized devices; polycrystalline silicon can be subjected to wet etching with a TMAH solution, and the operation is simple, convenient and safe; metal ions are not introduced, and the method is applicable to the integrated circuit manufacturing technology; the method is entirely compatible with a bulk silicon planar transistor process, and the process cost is small.
Owner:PEKING UNIV

Square steel tube concrete column-steel beam outer ring sleeve plate bolt connection joint

The invention discloses a square steel tube concrete column-steel beam outer ring sleeve plate bolt connection joint. The square steel tube concrete column-steel beam outer ring sleeve plate bolt connection joint comprises a square steel tube, the square steel tube is sleeved with an upper outer ring sleeve plate and a lower outer ring sleeve plate, the upper outer ring sleeve plate comprises an upper short sleeve, an inner surface of the upper short sleeve is connected with the square steel tube, an outer surface of the upper short sleeve is connected with an upper outer ring plate, the lowerouter ring sleeve plate and the upper outer ring sleeve plate are of the same structure, the lower outer ring sleeve plate comprises a lower short sleeve and a lower outer ring plate, and a steel beam is connected between the upper outer ring sleeve plate and the lower outer ring sleeve plate. The distribution of a column wall yield line is expanded, the column wall rigidity of a joint domain isimproved, and the contribution of an outer ring plate to the joint bearing capacity under the action of external load is increased; the defect that the rigidity at the joint is insufficient due to thefact that an inner ring plate is not arranged is overcome; by adopting the method, the field operation amount is small, the steel structure construction efficiency is improved, the material utilization rate is increased, and good economic benefits and social benefits are achieved.
Owner:SHENYANG JIANZHU UNIVERSITY

Semiconductor structure and forming method thereof

A semiconductor structure comprises a semiconductor substrate and multiple layers of superfine silicon lines. Interface shapes of the multiple layers of superfine silicon lines are doubly controlled by a crystal orientation of the substrate and axial crystal orientations of the lines. A forming method of the semiconductor structure includes: forming a fin-shaped silicon island Fin and source drain areas at two ends of the silicon island via an etching technology; preparing a corrosion masking layer for silicon; forming multiple layers of superfine silicone lines. The semiconductor structure and the forming method there of have the advantages that the finally formed multiple layers of superfine silicon lines are uniform and controllable in positions and section shapes; self-stopping of aeolotropism corrosion, large technical windows and the silicon lines in different diameters on a same silicon slice are achieved; ICPECVD (inductively coupled plasma enhance chemical vapor deposition) is strong in narrow groove filling power, and no cavity is left when materials of a sacrificial layer and the corrosion masking layer are deposited; the lines smaller than 10nm in size can be prepared by combining an oxidization technology, requirements on key technologies for small-size devices are met; a processing method is implemented from top to bottom and compatible with a bulk silicon planar transistor technology, and technical cost is low.
Owner:PEKING UNIV

Self-charge mouse

The invention discloses a self-charge mouse which comprises a shell, an energy conversion module and an energy collection module. A left keyboard plate and a right keyboard plate are arranged on the shell, a roller is arranged between the left keyboard plate and the right keyboard plate, and mechanical energy can be converted into electric energy by the energy conversion module on the basis of piezoelectric effects and electromagnetic induction; the energy conversion module comprises a first energy conversion module, a second energy conversion module and a third energy conversion module; the twin-stage vibration of the left keyboard plate and the right keyboard plate can be converted into electric energy by the first energy conversion module on the basis of the piezoelectric effects; rolling of the roller can be converted into electric energy by the second energy conversion module on the basis of the piezoelectric effects; movement of the mouse can be converted into electric energy by the third energy conversion module on the basis of the electromagnetic induction; the energy collection module comprises a first energy collection module, a second energy collection module and a third energy collection module and is used for collecting the electric energy generated by the energy conversion module.
Owner:江苏如心智能科技有限公司
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