Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing photo-mask and method for patterning

A photomask, reticle technology, applied in the photoengraving process of the pattern surface, the original for photomechanical processing, optics, etc., to avoid excessive optical proximity correction.

Active Publication Date: 2009-06-03
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method for making a photomask and patterning it to solve the problem of excessive correction faced by optical proximity correction in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing photo-mask and method for patterning
  • Method for preparing photo-mask and method for patterning
  • Method for preparing photo-mask and method for patterning

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0051] refer to figure 1 As shown, an embodiment of the present invention to make a photomask comprises the following steps:

[0052] Step s11, providing a first layout pattern, the first layout pattern includes a circuit pattern to be exposed and an additional pattern, the circuit pattern to be exposed has at least two unconnected relative layout lines, and the additional pattern divides the relative pattern line connected;

[0053] Step s12, providing a second layout pattern, the second layout pattern includes a first shielding pattern and a second shielding pattern, the first shielding pattern and the second shielding pattern are combined into a layout that can just cover the circuit pattern to be exposed graphics, and the distance between the first shielding pattern and the second shielding pattern is equal to the distance between the disconnected layout lines of the circuit pattern to be exposed;

[0054] Step s13, performing optical proximity correction on the first la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for patterning, comprising the steps as follows: a first layout pattern comprises a pattern for circuit to be exposed and an additive pattern; the pattern for the circuit to be exposed is provided with at least two relative layout lines which are not connected with each other; the additive pattern connects the relative layout lines; a second layout pattern used for removing the additive pattern is provided; optical adjacent correction is respectively carried out on the first layout pattern and the second layout pattern so as to form a first layout correction pattern and a second layout correction pattern which are respectively transferred to two photo-masks, thus forming a first mask pattern and a second mask pattern; the mask patterns of the first photo-mask and the second photo-mask are respectively transferred to a wafer. The invention also discloses a method for preparing the photo-mask. The method for preparing the photo-mask and the method for patterning can avoid excessive optical adjacent correction.

Description

technical field [0001] The present invention relates to a method of making a photomask and a method of patterning. Background technique [0002] Photolithography is an indispensable and important technology in the integrated circuit manufacturing process. The photolithography process usually includes the following steps: First, apply a photosensitive material such as photoresist on the surface of the wafer; On the material, the photosensitive material is then developed with a developer, and the developed pattern is used as a mask to perform etching and other processes, and finally complete the transfer of the mask pattern. [0003] As the size of devices in the integrated circuit manufacturing process becomes smaller and smaller, the requirements for the photolithography process are also higher and higher. At present, the purpose of exposing smaller-sized patterns is generally achieved by reducing the exposure wavelength of the exposure light source. However, this method ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/00G03F7/00G03F7/039G03F7/038G03F1/36
Inventor 王谨恒
Owner SEMICON MFG INT (SHANGHAI) CORP