Exposure method

Abstract

The invention relates to an exposure method, which is suitable for the photolithographic process. The method comprises the following steps: firstly carrying out a first alignment step for a wafer; then carrying out a second alignment step for the wafer; mutually comparing the results obtained from the first alignment step and the second alignment step; and finally carrying out the photoresist exposure step for the wafer according to the comparison results. The exposure method can effectively improve the accuracy of wafer alignment.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, and more particularly to an exposure method suitable for photolithography. Background technique [0002] With the rapid development of semiconductor process technology, in order to increase the speed and performance of components, the size of the entire circuit components must be continuously reduced, and the integration level of components must also be continuously improved. Generally speaking, as semiconductors tend to shrink the design and development of circuit components, the photolithography process plays a pivotal role in the entire process. [0003] In the semiconductor manufacturing process, the patterning of each layer of thin film or the region where dopants are implanted is defined by the photolithography process. The photolithography process is to first form a photosensitive photoresist material layer on the wafer surface. Then, a photoresist exposure step and a deve...

AI Technical Summary

Problems solved by technology

Since the exposure device cannot simultaneously perform mass production of photoresist exposure during wafer alignment, the throughput of the exposure device will be reduced

Moreover, with the continuous improvement of component integration, it is often necessary to measure more alignment marks (alignment marks) on the same wafer to provide enough data results to calibrate the exposure device. The reduction is more serious

[0006] In addition, in order to improve the yield problem of the above-mentioned photoresist exposure, when using the exposure device to perform the alignment step before exposure, often only one wafer is selected from a batch of wafers or several batches of wafers to carry out Alignment, and then use the alignment result of this wafer as the alignment result of a batch of wafers or several batches of wafers to correct the exposure device, and this method may cause the alignment accuracy to be affected

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