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Electrostatic prevention protection device construction having silicon controlled rectifier triggering current

A silicon-controlled rectifier, triggering current technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of prone to latch-up effect and small conduction current.

Active Publication Date: 2011-07-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The disadvantage of this structure is that the P-well resistance Rpw and N-well resistance Rnw in the equivalent circuit are relatively large, resulting in a small trigger current for the SCR to be turned on, and the latch-up effect is prone to occur after it is turned on.

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  • Electrostatic prevention protection device construction having silicon controlled rectifier triggering current
  • Electrostatic prevention protection device construction having silicon controlled rectifier triggering current
  • Electrostatic prevention protection device construction having silicon controlled rectifier triggering current

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Embodiment Construction

[0016] In order to prevent the occurrence of the latch-up effect, the IV characteristics of the silicon-controlled rectifier as an anti-static protection device are required to meet the standards when the product is subjected to the latch-up test. The solution is to increase the turn-on current above this standard. This prevents failure of the latch test. And through the NW implantation area and PW (P well) implantation area N + District and P + The region injection region forms a staggered structure, which can reduce the N-well resistance Rnw and the P-well resistance Rpw in the equivalent circuit, thereby increasing the turn-on current (0.7V / Rnw) required by the SCR structure.

[0017] See figure 2 As shown, the antistatic protection device structure for increasing the trigger current of the silicon controlled rectifier of the present invention includes a P-type substrate on which a P-well implantation region and an N-well implantation region are formed by ion implantation, so...

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PUM

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Abstract

The invention discloses an anti-static protection device structure for increasing trigger current of silicon controlled rectifiers. On a joint of a P well injection region and an N well injection region, N+ regions and P+ regions are sequentially staggered, alternated and formed on one side of the P well injection region from top to bottom; the P+ regions and the N+ regions are sequentially staggered, alternated and formed on one side of the N well injection region from top to bottom; and a polysilicon is arranged above the joint. The structure has the advantages of effectively reducing equivalent on-resistance, increasing the trigger current of SCR structures and preventing the occurrence of latch-up.

Description

Technical field [0001] The invention relates to an electrostatic protection device structure, in particular to an anti-static protection device structure for increasing the trigger current of a silicon controlled rectifier. Background technique [0002] The damage of static electricity to electronic products has always been a problem that is not easy to solve. Nowadays, it is more popular to use SCR (Silicon Controlled Rectifier) ​​as an anti-static protection device ( Figure 4 It is the equivalent circuit diagram of the anti-static protection of the silicon controlled rectifier), but because the current that triggers the conduction is small, the latch-up effect may occur after it is turned on. Therefore, in order to avoid such parasitic effects as much as possible, when designing the structure of the SCR protection device, it is necessary to consider increasing the trigger current to a safe area where the latch will not occur, so as to ensure that the protection device is in the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/60
Inventor 苏庆
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP