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Electrostatic prevention protection device construction having silicon controlled rectifier triggering current added

A silicon-controlled rectifier, triggering current technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of small conduction current and easy latch-up effect.

Active Publication Date: 2009-06-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The disadvantage of this structure is that the P-well resistance Rpw and N-well resistance Rnw in the equivalent circuit are relatively large, resulting in a small trigger current for the SCR to be turned on, and the latch-up effect is prone to occur after it is turned on.

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  • Electrostatic prevention protection device construction having silicon controlled rectifier triggering current added
  • Electrostatic prevention protection device construction having silicon controlled rectifier triggering current added
  • Electrostatic prevention protection device construction having silicon controlled rectifier triggering current added

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Embodiment Construction

[0016] In order to prevent the occurrence of the latch-up effect, the IV characteristics of the silicon controlled rectifier as an anti-static protection device are required to meet the standards when the product is subjected to a latch-up test. The solution is to increase the turn-on current above this standard. This prevents the latch-up test from failing. And by forming the N+ region and the P+ region implanted region in the NW implant region and the PW (P well) implant region in a staggered form, the N well resistance Rnw and the P well resistance Rpw in the equivalent circuit can be reduced, thereby making the SCR The turn-on current (0.7V / Rnw) required by the structure increases.

[0017] see figure 2 As shown, the antistatic protection device structure for increasing the trigger current of the silicon controlled rectifier of the present invention includes a P-type substrate, and a P-well implantation region and an N-well implantation region formed by ion implantation...

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Abstract

The invention discloses an anti-static protection device structure for increasing trigger current of silicon controlled rectifiers. On a joint of a P well injection region and an N well injection region, N+ regions and P+ regions are sequentially staggered, alternated and formed on one side of the P well injection region from top to bottom; the P+ regions and the N+ regions are sequentially staggered, alternated and formed on one side of the N well injection region from top to bottom; and a polysilicon is arranged above the joint. The structure has the advantages of effectively reducing equivalent on-resistance, increasing the trigger current of SCR structures and preventing the occurrence of latch-up.

Description

technical field [0001] The invention relates to an electrostatic protection device structure, in particular to an anti-static protection device structure for increasing the trigger current of a silicon controlled rectifier. Background technique [0002] The harm of static electricity to electronic products has always been a problem that is not easy to solve. Today, it is more popular to use SCR (Silicon Controlled Rectifier) ​​rectifiers as anti-static protection devices ( Figure 4 It is the equivalent circuit diagram of the anti-static protection of the silicon controlled rectifier), but because the current that triggers the conduction is small, it may cause a latch-up effect after it is turned on. Therefore, in order to avoid such parasitic effects as much as possible, when designing the structure of silicon-controlled rectifier protection devices, it is necessary to consider increasing the trigger current to a safe area where latch-up will not occur, so as to ensure that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60
Inventor 苏庆
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP