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Silicon controlled rectifier structure with novel triggering mode and manufacturing method thereof

A trigger mode and silicon structure technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reduced contact area, unfavorable stable and efficient operation of thyristors, and increased on-state voltage drop of thyristors. The effect of maintaining the current increase, improving the anti-interference ability, and reducing the on-state voltage drop

Pending Publication Date: 2022-07-29
JILIN SINO MICROELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the control electrode 701 is arranged on the same side as the first electrode 101, the contact area between the first electrode 101 and the first emitter 201 is relativ

Method used

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  • Silicon controlled rectifier structure with novel triggering mode and manufacturing method thereof
  • Silicon controlled rectifier structure with novel triggering mode and manufacturing method thereof
  • Silicon controlled rectifier structure with novel triggering mode and manufacturing method thereof

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Embodiment Construction

[0032] The technical solutions in some embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments provided by the present invention, all other embodiments obtained by those of ordinary skill in the art fall within the protection scope of the present invention.

[0033] Throughout the specification and claims, the term "comprising" is to be interpreted in an open, inclusive sense, ie, "including, but not limited to," unless the context requires otherwise. In the description of the specification, the terms "some embodiments", "some examples" or "exemplary" and the like are intended to indicate that a particular feature, structure, material or characteristic associated with the embodiment or example is included in at least one implementation of the present inv...

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Abstract

The invention discloses a silicon controlled rectifier structure with a novel triggering mode and a manufacturing method thereof, and the silicon controlled rectifier structure comprises a main body structure, an electrode structure and an isolation structure. The main body structure comprises a first emitting electrode, a first base region, a second base region and a second emitting electrode which are stacked in sequence. The electrode structure comprises a first electrode and a second electrode which are positioned on two sides of the main body structure; the first electrode and the second electrode cooperate to drive the main body structure to be conducted. The isolation structure includes a gate member and a third base region located on at least one side of the body structure and in contact with the first emitter and the second base region. The doped elements in the third base region and the second base region have the same characteristics; the gate pole component is in contact with the third base region; and the gate pole component injects current into the third base region to trigger the conduction of the main body structure. The silicon controlled structure has the effects of increasing the emitter contact area and reducing the on-state voltage drop, and is suitable for thyristors.

Description

technical field [0001] The present application relates to the technical field of power semiconductor devices, and in particular, to a novel trigger-mode thyristor structure and a manufacturing method thereof. Background technique [0002] The thyristor is the abbreviation of the thyristor rectifier, which is a high-power semiconductor device with a four-layer structure with three PN junctions, also known as a thyristor. SCR can be used in refrigerators, air conditioners, electric fans, hair straighteners, smart toilets, industrial equipment, national grid and other electrical equipment, and is an important power semiconductor device. [0003] In related technologies, such as figure 1 As shown, the thyristor 10 ′ generally includes a control electrode 701 and a first electrode 101 , a first emitter electrode 201 , a first base region 301 , a second base region 401 , a second emitter electrode 501 and a second electrode 601 which are stacked in sequence. . The control elect...

Claims

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Application Information

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IPC IPC(8): H01L29/08H01L29/10H01L29/74H01L21/332
CPCH01L29/74H01L29/66363H01L29/1012H01L29/083
Inventor 邵长海
Owner JILIN SINO MICROELECTRONICS CO LTD