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Electrostatic discharge protection device

An electrostatic discharge protection and current technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of silicon-controlled rectifier burnout and insufficient reliability, and achieve high reliability.

Pending Publication Date: 2021-04-16
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon-controlled rectifiers are easily triggered by noise to enter the Latch Up state and burn out, so there is a problem of insufficient reliability

Method used

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  • Electrostatic discharge protection device
  • Electrostatic discharge protection device
  • Electrostatic discharge protection device

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Embodiment Construction

[0038] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. In the drawings, the same reference numerals represent the same or similar elements or method flows.

[0039] figure 1 It is a simplified cross-sectional schematic diagram and an equivalent circuit schematic diagram of the electrostatic discharge protection device 100 according to an embodiment of the present invention. The ESD protection device 100 includes a substrate 101 , a first well 102 , a second well 103 , a first doped region 110 , a second doped region 120 , and a third doped region 130 . The first doped region 110 is coupled to the first node N1, wherein the first node N1 can be used to couple the internal circuit to be protected by the ESD protection device 100 .

[0040] In one embodiment, the first node N1 i...

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Abstract

The invention discloses an electrostatic discharge protection device. The electrostatic discharge protection device comprises a first doped region, a silicon-controlled rectifier and a bypass unit, wherein the first doped region is coupled to a first node and is used as the common anode of the silicon controlled rectifier and the bypass unit, if the current of the first node is smaller than a trigger current value, the current is discharged through the bypass unit, and if the current is larger than the trigger current value, the current is discharged through the bypass unit and the silicon controlled rectifier.

Description

technical field [0001] The invention relates to an electrostatic discharge protection device, in particular to an electrostatic discharge protection device including a silicon controlled rectifier. Background technique [0002] Electrostatic Discharge (ESD for short) is a phenomenon caused by two charged objects due to contact, short circuit or dielectric breakdown. Electrostatic discharge will cause permanent damage to the semiconductor device due to excessive electrical stress, so the semiconductor device is usually equipped with an electrostatic discharge protection device and a discharge path to improve product reliability. [0003] Silicon Controlled Rectifier (SCR) has the advantages of small layout area and excellent electrostatic discharge protection ability, so silicon controlled rectifier is often used in the electrostatic discharge protection device of high-density chips. However, the silicon controlled rectifier is easily triggered by noise to enter the latch-up...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
Inventor 陈哲宏陈永初
Owner MACRONIX INT CO LTD