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A method of increasing the trigger current of one-way micro-trigger thyristor

A technology of triggering current and micro-triggering, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc. It can solve the problems that the triggering current of thyristor devices does not meet the requirements, and achieve the effect of increasing the triggering current

Inactive Publication Date: 2018-05-08
ZHEJIANG ENERGY & NUCLEAR TECH APPL RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual production, the magnitude of the trigger current is mainly controlled by the doping and diffusion process, and once the wafer chip production is over, the trigger current cannot be changed, so the trigger current of some thyristor devices does not meet the requirements

Method used

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  • A method of increasing the trigger current of one-way micro-trigger thyristor
  • A method of increasing the trigger current of one-way micro-trigger thyristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1. This example is used to remedy the small trigger current

[0027] The order requires the trigger current I of the SCR wafer GT In the range of 10μA to 30μA,

[0028] 1. The enterprise produces silicon controlled silicon wafers according to conventional methods;

[0029] 2 in the test: the test results show that except for the trigger current I GT In addition to the thyristor wafers that meet the requirements of 10μA to 30μA, there are also some thyristor wafers that trigger current I GT Deviation from lower limit (5μA~20μA) or upper limit (10μA~35μuA);

[0030] 3. Screen out the trigger current I GT Thyristor wafer with 5μA~20μA;

[0031] 4. If figure 1 As shown, put the screened thyristor wafers into electronic-grade wafer bags, lay them flat on the transfer trolley, and the transfer trolley passes through the electron accelerator (GJ-1.5 high-frequency and high-voltage type, Shanghai Pioneer Motor Factory ) scanning window for irradiation, electro...

Embodiment 2

[0036] Embodiment 2. This example is also used to remedy the small trigger current

[0037] The order requires the trigger current I of the SCR wafer GT In the range of 10μA to 30μA,

[0038] 1. The enterprise produces silicon controlled silicon wafers according to conventional methods;

[0039] 2 in the test: the test results show that except for the trigger current I GT In addition to the thyristor wafers that meet the requirements of 10μA to 30μA, there are also some thyristor wafers that trigger current I GT Deviation from lower limit (5μA~20μA) or upper limit (10μA~35μuA);

[0040] 3. Screen out the trigger current I GT Thyristor wafer with 5μA~20μA;

[0041] 4. If figure 1 As shown, put the screened thyristor wafers into electronic-grade wafer bags and lay them flat on the transfer trolley. The transport trolley passes through the scanning window of the accelerator several times at an even speed for irradiation, with electron energy of 1.5MeV and beam current of 0....

Embodiment 3

[0046] Embodiment 3, this example is also used to remedy the small trigger current

[0047] The order requires the trigger current I of the SCR wafer GT In the range of 20μA~40μA,

[0048] 1. The enterprise produces silicon controlled silicon wafers according to conventional methods;

[0049] 2 in the test: the test results show that except for the trigger current I GT In addition to the thyristor wafers that meet the requirements of 20μA to 40μA, there are also some thyristor wafers that trigger current I GT Deviation from lower limit (10μA~30μA) or upper limit (20μA~50μA);

[0050] 3. Screen out the trigger current I GT 10μA~30μA thyristor wafer;

[0051] 4. If figure 1 As shown, put the screened thyristor wafers into electronic-grade wafer bags, and lay them flat on the transfer cart. The transfer cart passes through the scanning window of the accelerator at an even speed for multiple times for irradiation, with electron energy of 1.3 MeV and beam current of 0.3 mA, ...

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Abstract

The invention relates to a method for increasing trigger current of a one-way micro-triggered thyristor, aims at providing a method for increasing trigger current of a one-way micro-triggered thyristor, and mainly aims at achieving the following two purposes: (1) a remedial measure for low trigger current of thyristor wafers after production in a conventional method is ended; and (2) a rapid adjustment method when trigger current gears of the thyristor wafers are not matched with customer requirements. According to the technical scheme provided by the invention, the method comprises two schemes: a remedial measure adopted when the low trigger current of certain thyristor wafers is found out after the conventional production is ended, and a rapid adjustment method when the trigger current gears of the thyristor wafers of the graded and warehoused products do not conform to the customer requirements. The method provided by the invention is suitable for the technical field of semiconductors.

Description

technical field [0001] The invention relates to a method for increasing the trigger current of a unidirectional micro-trigger thyristor. It belongs to the field of semiconductor technology. Background technique [0002] Thyristor, also known as thyristor, is a semiconductor element with PNPN three-junction structure, which is widely used in speed regulation, light regulation, voltage regulation, temperature regulation and other control circuits. The trigger current is the key parameter to control the conduction of the thyristor. [0003] As the core component of the power conversion device, the thyristor has the advantages of small size, low power consumption, strong flow capacity, and high blocking voltage. It has a wide range of applications in modern industrial fields such as energy, urban construction, environmental protection, and national defense, such as environmental protection The flue gas treatment power supply in the field, the photovoltaic inverter in the new e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/332H01L21/66H01L21/263
CPCH01L21/263H01L22/30H01L29/66363
Inventor 陈祖良岳巍王华明章月红李兆龙
Owner ZHEJIANG ENERGY & NUCLEAR TECH APPL RES INST