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Repairing and restoring strength of etch-damaged low-k dielectric materials

A dielectric material, plasma etching technology, applied in nanotechnology, circuits, electrical components, etc. for materials and surface science, which can solve problems such as decreased hydrophobicity of LKD materials

Inactive Publication Date: 2012-04-04
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During etching, ashing and / or cleaning operations, at least a portion of the carbon-containing moieties are removed, resulting in a decrease in the hydrophobicity of the LKD material

Method used

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  • Repairing and restoring strength of etch-damaged low-k dielectric materials
  • Repairing and restoring strength of etch-damaged low-k dielectric materials
  • Repairing and restoring strength of etch-damaged low-k dielectric materials

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach

[0106] In addition to the above discussion, silicon wafers containing patterned dielectric layers consisting of porous low-k films were split and a series of wafer coupons were used for various processing processes. Before breaking into small pieces, the wafer can be patterned by a standard reactive ion etching ("RIE") process, in which a plasma etches features into the wafer through a pattern of openings in a photoresist overlying the dielectric layer . After patterning, the remaining photoresist is removed using an oxygen-containing plasma or by a fluid-based process. The RIE and plasma lift-off process brings the dielectric layer chemically very close to the patterned area, causing an undesired rise in dielectric value. This damage can also affect the mechanical properties of the film and have a negative impact on subsequent metal layers.

[0107] The wafer coupons used in the examples below were substantially identical to each other.

Embodiment 1

[0108] Embodiment 1: the low-k dielectric of plasma etching damage with supercritical fluid process Repair, Wafer Coupon

[0109] The wafer coupon is placed in a pressure vessel heated to approximately 160°C, equipped with two fluid inlets, a fluid outlet, a thermocouple, a heater, a pressure gauge, and associated valves and controls. Add SCCO to this container 2 and n-PTMS to a pressure of about 175 bar. n-PTMS and SCCO 2 The molar ratio is about 0.05. The solution was maintained at the aforementioned temperature and pressure for about 60 minutes. Add basically pure SCCO from one of the inlets 2 , while discharging fluid from the outlet so that the pressure remains constant. Substantially pure SCCO in about ten (10) fluid volumes 2 After the fluid exchange is complete, stop adding SCCO 2 , vent container to atmospheric conditions. The treated wafer test piece (repair sample) and the same unprocessed test piece (unprocessed sample) were left in 1% HF aqueous soluti...

Embodiment 2

[0112] Example 2: Time dependence of repair process

[0113] The coupons were processed as described in Example 1 above, but in SCCO 2 After the addition of n-PTMS, the sample was only maintained at a temperature and pressure of about 160° C. and about 175 bar for about 10 minutes. in pure SCCO 2 After performing the above washing, the sample and another untreated test piece were etched with 1% by weight aqueous HF solution.

[0114] Inspection and measurements by SEM showed an average undercut value of about 50 nm for the untreated coupons and about 41 nm for the treated coupons, for an overall repair of about 20%.

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Abstract

A process of repairing a plasma etched low-k dielectric material having surface-bound silanol groups includes exposing at least one surface of the dielectric material to (a) a catalyst so as to form hydrogen bonds between the catalyst and the surface-bound silanol groups obtaining a catalytic intermediary that reacts with the silane capping agent so as to form surface-bound silane compounds, or (b) a solution comprising a supercritical solvent, a catalyst, and a silane capping agent so as to form hydrogen bonds between a catalyst and the surface-bound silanol groups obtaining a catalytic intermediary that reacts with the silane capping agent so as to form surface-bound silane compounds. Horizontal networks can be formed between adjacent surface-bound silane compounds. The dielectric material can be further treated with an organic acid so as to catalyze a hydrolytic reaction with alkoxy groups on the surface-bound silane compounds forming silanol groups that can be condensed via heat to remove water as a byproduct.

Description

Background technique [0001] In the semiconductor industry, low-k dielectric ("LKD") films are used to reduce interconnect delay in integrated circuits ("ICs") relative to conventional dielectric materials. Dielectric materials used in ICs include inorganic materials such as silicon dioxide ("SiO 2 ") with a k value of about 4.0. Other dielectric materials include spin-on coatings obtained by spin-coating, dip-coating, spray-coating, chemical vapor deposition ("CVD"), rolling, dripping and / or spreading Dielectric films and LKD films. Generally speaking, LKD materials with k values ​​below 3.0 are satisfactory. [0002] The low k value of inorganic materials can be achieved by adding carbon to reduce the polarizability. Ultra-low k values ​​(ie, <2.4) can be achieved by increasing the porosity of the LKD material. Such a porous LKD tends to collect impurities because the interior of the membrane is exposed through the pores. [0003] LKD materials can be damaged during pl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
CPCB05D1/185H01L21/76814B05D2401/90H01L21/3122H01L21/3105H01L21/31633H01L21/31695B82Y40/00H01L21/76826B82Y30/00H01L21/31116B05D5/005H01L21/02126H01L21/02203
Inventor 詹姆斯·德扬
Owner LAM RES CORP