Memory and method for producing the same

Abstract

The invention discloses a nanocrystalline floating boom nonvolatile memory of a coronary barrier composite tunneling layer, comprising a silicon substrate, a source conduction region and a drain conduction region heavily doped on the silicon substrate, a composite tunneling layer consisting of high k material medium / SiO2 material medium / high k material medium and being covered on a current carrier groove between the source conduction region and the drain conduction region, a nanocrystalline floating boom layer covered on the composite tunneling layer, high k material or SiO2 material control grid medium layer covered on the nanocrystalline floating boom layer and a grid material layer covered on the control grid medium layer. The invention further discloses a method for manufacturing the memory. By the utilization of the memory and the method, the memory property of the floating boom nonvolatile memory is improved comprehensively, programming / erasing speed, tolerance and data maintenance property are improved, programming / erasing voltage and operation power consumption are reduced, programming / erasing efficiency and data maintenance contradiction are compromised and integration level is improved. In addition, the memory has simple manufacturing technology, thus reducing the manufacturing cost.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a nanocrystal floating gate nonvolatile memory of a crown barrier composite tunneling layer and a manufacturing method thereof. Background technique [0002] Floating gate structure memory is a mainstream type of memory that is widely used and generally recognized at present. It is a very important semiconductor component and is widely used in the electronics and computer industries. Due to its own structure and material selection, the traditional floating gate structure memory has the limitations of requiring fast write / erase operations and long-term high-stability storage. Moreover, as the technology node shrinks, this contradiction does not Not significantly improved, thus limiting the development of floating gate memory. [0003] As the feature size enters the nanoscale, how to adapt to the development of the process and improve the performance of writing, reading, ...

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Problems solved by technology

[0016] However, the preparation of nanocrystalline particles by the above method generally has the disadvantages of complex production process, high production cost, low production efficiency, or large nanocrystalline particles, or difficult process control during the production process, or poor feasibility and poor compatibility with traditional CMOS processes.

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