Conductive structure for a semiconductor integrated circuit
A conductive structure and integrated circuit technology, applied in semiconductor devices, circuits, semiconductor/solid-state device components, etc., can solve problems such as easy oxidation of the surface, decreased conductivity of the overall bump, and damage
Active Publication Date: 2011-12-28
CHIPMOS TECH INC
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Problems solved by technology
[0006] However, no matter it is the above-mentioned combined bump or the combined bump added with a buffer layer, there is an obvious shortcoming
When the conductor layer is not made of gold, its surface will be easily oxidized, which will cause the overall bump conductivity to decrease or even destroy the overall bump structure
Method used
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[0028] image 3 It is a first embodiment of the present invention, which is a conductive structure for a semiconductor integrated circuit. The semiconductor integrated circuit includes a liner 301 and a protection layer 302 . The protection layer 302 partially covers the liner 301 to define an opening area, so that the conductive structure can be properly electrically connected to the liner 301 through the opening area. Generally speaking, the opening region is already formed when the semiconductor integrated circuit is completed, so as to facilitate the subsequent formation of the conductive structure.
[0029] In this embodiment, the conductive structure includes a lower metal layer 303 , a first conductive layer 304 , a second conductive layer 305 and a covering conductive layer 306 . It should be noted that, except for the covering conductor layer 306, the method of forming a conductive structure is understood by those skilled in the art, such as electroplating, using th...
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The invention relates to a conductive structure used for a semiconductor integrated circuit. The semiconductor integrated circuit comprises a pad and a protective layer which locally covers the pad so as to define an opening area together. The conductive structure can be electrically connected with the pad through the opening area. The conductive structure comprises a lower metal layer, a first conductor layer, a second conductor layer and a conductor covering layer, wherein the first conductor layer is formed on the lower metal layer and electrically connected with the lower metal layer; and the second conductor layer is formed on the first conductor layer and electrically connected with the first conductor layer. Furthermore, the lower metal layer, the first conductor layer and the second conductor layer define a basic lug structure together, and the conductor covering layer is suitable for completely covering the basic lug structure basically.
Description
technical field [0001] The invention relates to a conductive structure of a semiconductor integrated circuit; in particular, it relates to a conductive structure capable of preventing surface oxidation of the conductive structure. Background technique [0002] Bump technology has been widely used in the fields of microelectronics and micro system as an electrical connection interface between semiconductor integrated circuits and circuit boards. Taking the connection between a circuit board and an integrated circuit (IC) chip as an example, the integrated circuit chip can be connected to the circuit board in various ways, and the bump is formed in the opening defined by the protective layer on the pad in the integrated circuit chip In the area, the pads are electrically connected to the pins of the circuit board. [0003] Among metals, gold has better conductivity, so gold is commonly used as bump material in the packaging process, which is called gold bump. see figure 1 ,...
Claims
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IPC IPC(8): H01L23/485
CPCH01L2224/11
Inventor 苏圣全
Owner CHIPMOS TECH INC