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Method for manufacturing single-electron memory

A memory and single-electron technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of complex process steps, relying on electron beam lithography secondary alignment, etc., and achieve less process steps and low power consumption , The effect of low operating voltage

Active Publication Date: 2009-09-02
成都豆萁集成电路设计有限公司
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Problems solved by technology

[0004] In order to solve the shortcomings of the existing single-electron memory preparation technology, such as complicated process steps and over-reliance on the secondary alignment of electron beam lithogra

Method used

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  • Method for manufacturing single-electron memory

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Embodiment Construction

[0029] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0030] The present invention is a preparation method of a single electron memory, and the specific process steps are as follows:

[0031] (1) Use p-type, crystal orientation 2-inch SOI as the substrate. The thickness of the top layer silicon 2 of the substrate is 50nm, the thickness of the buried oxide layer 3 is 375nm, the thickness of the bulk silicon layer is 5000+100nm, and the resistivity of the top layer silicon 2 figure 1 shown;

[0032] (2) Spin-coat Zep520 photoresist on the SOI substrate 1, after exposure by electron beam lithography, develop, fix, and dry with high-purity nitrogen to obtain the glue pattern and glue pattern of source, drain electrode, and conductive channel 4 On the SOI substrate 1 the shape is as figure 2 shown;

[0033] (3) Transfer the glue pattern 4 to the top layer silicon 2 by wet etch...

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Abstract

The invention provides a method for manufacturing a single-electron memory, which relates to the technical field of nano-devices. In order to overcome the defect of complicated technical steps in the manufacturing technology of the prior single-electron memory, the invention aims at providing the method for manufacturing the single-electron memory. An electrode pattern and a conductive channel are manufactured by adopting electron beam photoetching technology and photoetching technology, source and drain contact electrodes are manufactured by an optical photoetching and stripping method, thin-layer silicon is manufactured by an electron beam evaporating method, then, the thin-layer silicon on the surface is manufactured into silicon quantum dots by flash annealing technology, and finally, gate electrodes are manufactured by stripping technology. The invention has simple technical steps and is compatible with the traditional microelectronic technology. The single-electron memory manufactured by the method has great consistency, low operating voltage and low power consumption.

Description

technical field [0001] The invention relates to the technical field of manufacturing nanometer devices, in particular to a method for preparing a single-electron memory. Background technique [0002] For more than half a century, semiconductor integrated circuits with CMOS as the mainstream technology have been developing rapidly following "Moore's Law". Nanoelectronic devices with new principles, such as various quantum dot devices, nanowires, nanotube devices, single-electron devices, and single-electron memories, have become research hotspots. With the continuous reduction of global consumable resources, the manufacture of various devices with low energy consumption has become a research hotspot, including components such as single-electron devices and single-electron memories based on the Coulomb blocking effect. [0003] The traditional methods for preparing memories are complicated in process, and their operating voltages are relatively high, resulting in high energy ...

Claims

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Application Information

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IPC IPC(8): H01L21/8239
Inventor 贾锐李维龙陈晨朱晨昕李昊峰张培文刘明
Owner 成都豆萁集成电路设计有限公司
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