Method for manufacturing single-electron memory

Abstract

The invention provides a method for manufacturing a single-electron memory, which relates to the technical field of nano-devices. In order to overcome the defect of complicated technical steps in the The invention provides a method for manufacturing a single-electron memory, which relates to the technical field of nano-devices. In order to overcome the defect of complicated technical steps in themd by the method has great consistency, low operating voltage and low power consumption.tured by the method has great consistency, low operating voltage and low power consumption.anufacturing technology of the prior single-electron memory, the invention aims at providing the method for manufacturing the single-electron memory. An electrode pattern and a conductive channel aremanufacturing technology of the prior single-electron memory, the invention aims at providing the method for manufacturing the single-electron memory. An electrode pattern and a conductive channel are manufactured by adopting electron beam photoetching technology and photoetching technology, source and drain contact electrodes are manufactured by an optical photoetching and stripping method, thin-manufactured by adopting electron beam photoetching technology and photoetching technology, source and drain contact electrodes are manufactured by an optical photoetching and stripping method, thin-layer silicon is manufactured by an electron beam evaporating method, then, the thin-layer silicon on the surface is manufactured into silicon quantum dots by flash annealing technology, and finally,layer silicon is manufactured by an electron beam evaporating method, then, the thin-layer silicon on the surface is manufactured into silicon quantum dots by flash annealing technology, and finally,gate electrodes are manufactured by stripping technology. The invention has simple technical steps and is compatible with the traditional microelectronic technology. The single-electron memory manufacgate electrodes are manufactured by stripping technology. The invention has simple technical steps and is compatible with the traditional microelectronic technology. The single-electron memory manufacture

Description

Technical field [0001] The invention relates to the technical field of nano device manufacturing, in particular to a method for preparing a single electron memory. Background technique [0002] For more than half a century, semiconductor integrated circuits with CMOS as the mainstream technology have been developing rapidly in accordance with "Moore's Law", and their feature sizes have entered the nanometer level, but they are also facing more and more serious challenges. Therefore, they are based on new materials. , Nanoelectronic devices with new principles, such as various quantum dot devices, nanowires, nanotube devices, single-electron devices, single-electron memory, etc. have become research hotspots. With the continuous reduction of global consumable resources, the production of various devices with low energy consumption has become a focus of research, including single-electron devices and single-electron memory components based on the Coulomb blockade effect. [0003] Th...

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Problems solved by technology

[0004] In order to solve the shortcomings of the existing single-electron memory preparation technology, such as complicated process steps and over-reliance on the secondary alignment of electron beam lithography, the purpose of the present invention is to provide a preparation method of a single-electron memory, which has a simple preparation process and can Compatible with conventional microelectronics processes

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