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Multi-cell connected high-power optoelectronic device with unit-cell failure self-protection function

A technology of optoelectronic devices and protection functions, applied in the field of semiconductor optoelectronics, to achieve the effects of improving universal applicability, improving overall stability and reliability, and eliminating influence

Active Publication Date: 2014-10-08
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, simply using process quality control to improve the reliability of large-area chips is not the best method either.

Method used

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  • Multi-cell connected high-power optoelectronic device with unit-cell failure self-protection function
  • Multi-cell connected high-power optoelectronic device with unit-cell failure self-protection function
  • Multi-cell connected high-power optoelectronic device with unit-cell failure self-protection function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Such as Figure 2a The plane structure diagram of an ordinary front light-emitting LED chip connected in series with fusible resistors connected in parallel is shown: the entire LED chip is composed of a unit cell 1, a fusible resistor 2, a cathode lead 3, a cathode pressure solder block 5, an anode lead 4 and an anode Composed of pressure welding blocks 6, wherein the cathode pressure welding block 5 and the anode pressure welding block 6 constitute the chip general lead-out electrode of the optoelectronic device. The cathode lead 3 of each unit cell 1 is connected to the cathode welding block 5, and the anode lead 4 between the unit cell 1 and the anode welding block 6 is connected in series with a fusible resistor 2 and then connected to the anode welding block 6 . and Figure 2b Shown is a cross-section of a unit cell and its lead connection in a common front-emitting LED chip in which fusible resistors are connected in series and connected in parallel. The unit ...

Embodiment 2

[0037] Such as Figure 3a As shown in the plane structure diagram of a vertical LED chip connected in series with fusible resistors in parallel: the entire LED chip consists of a unit cell active area 21, a fusible resistor 22, a cathode lead 23, a cathode pressure solder block 24, and a conductive lining from the back. The composition of the anode drawn from the bottom. A fusible resistor 22 is connected in series on the cathode lead 23 between the unit cell active region 21 and the cathode welding block 24, and the unit cell active region 21, the fusible resistor 22 and the cathode welding block 24 are formed by the cathode lead 23 series access. and Figure 3b Shown is a cross-sectional structure of a unit cell in a vertical LED chip connected in series with fusible resistors connected in parallel and its leads. The conductive substrate 20 is used for the anode extraction of the chip, the unit cell active region 21 is located on one side of the conductive substrate 20, a...

Embodiment 3

[0039] The multi-cell parallel design with fusible resistors connected in series can also be applied to LED chips with a flip-chip structure, and its connection methods are also diverse.

[0040] One of the connection methods is to design the fusible resistor on the same side as the active area of ​​the LED chip. Such as Figure 4a As shown: the chip is composed of epitaxial substrate 30, active region 31, cathode lead-out region 32, insulating medium 33, cathode leads 341 and 342, anode bump 361 and cathode bump 371, while the transfer substrate is composed of anode bump 362, The cathode bump 372 , the anode lead 381 , the cathode lead 382 and the insulating substrate 39 are composed. The active chip and the transfer substrate are combined by a flip-chip welding process, the anode bump 361 is connected to the anode bump 362 , and the cathode bump 371 is connected to the cathode bump 372 . The current flows from the anode lead 381 to the active region through the anode bump ...

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PUM

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Abstract

The invention discloses a multi-cell connected high-power photoelectric device with a single-cell failure self-protecting function and relates to the field of semiconductor optoelectronics. A chip ofthe photoelectric device is divided into at least two single cells, and an anode lead and a cathode lead of each single cell are connected with a main extraction electrode with corresponding polarity.The multi-cell connected high-power photoelectric device is characterized in that at least one fusible resistor is connected in series to an electrode lead between each single cell and the main extraction electrode, and the fusible resistors are resistors causing electric insulation by fusion when the elevation of temperature caused by the current thermal effect reaches and exceeds a self meltingpoint. The invention can rapidly perform the electric insulation effect on the abnormal short circuit failure of any single cell in the photoelectric device in time in such a way that the fusible resistors are connected in series between the single cell and the main extraction electrode, thereby eliminating the influence of the single cell failure on other parts of the device and improving the integral stability and the reliability of the photoelectric device.

Description

technical field [0001] The invention relates to a structure of a semiconductor optoelectronic device, in particular to a chip structure of a high-power optoelectronic device, and belongs to the field of semiconductor optoelectronics. Background technique [0002] Optoelectronic devices refer to a type of device that converts light energy and electrical energy into each other. There are many types, such as: light emitting diode (LED), solar cell, photodetector, laser (LD) and so on. Among them, LED is the most widely used optoelectronic device in daily life. In recent years, with the continuous maturity of gallium nitride-based blue light, green light and ultraviolet light LED technology, the luminous efficiency has been continuously improved, and the application value of LED has been paid more and more attention. As a light source, LED has many advantages, which are highlighted in: high luminous efficiency (the latest research results have achieved white light of 160lm / W, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/075H01S3/23H01L23/62H01L23/48
CPCH01L24/18H01L2224/16H01L2224/16227H01L2224/18H01L2224/24195H01L2224/73267H01L2924/19105H01L2924/00012
Inventor 蔡勇
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI