Method for producing polysilicon rod

A manufacturing method and technology of polysilicon rods, which are applied in the fields of solar energy and semiconductors, can solve the problems of high equipment and operation requirements, and achieve the effect of promoting mass transfer, promoting mass transfer, and not increasing maintenance costs

Inactive Publication Date: 2010-06-02
JIANGSU ZHONGNENG POLYSILICON TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the EFG (Edge Defined FilmFeed) method must be used to prepare such hollow silicon tubes. Compared with conventional polysilicon manufacturers using silicon mandrel furnaces to prepar

Method used

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  • Method for producing polysilicon rod
  • Method for producing polysilicon rod
  • Method for producing polysilicon rod

Examples

Experimental program
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Example Embodiment

[0106] Example 1:

[0107] In this embodiment, the reaction pressure in the reduction furnace is controlled at 0.3 MPa, and the reaction temperature is controlled at 1080°C.

[0108] At the beginning of the manufacturing method (at time 0), the hydrogen and trichlorosilane are respectively adjusted to 35.8Nm 3 / h and 5.5Nm 3 / h of air intake is continuously passed into the reduction furnace. At this time, the molar ratio Q value is 6.5.

[0109] First, it takes 45 hours to make the molar ratio Q expressed in the upper stage expression of the aforementioned first-order piecewise function (wherein the first-order piecewise function expression a value, b value, c value, and d value are passed in accordance with the aforementioned It is determined by calculation method, omitted here, the same below) continuously changed to 2.5. At the same time, within the aforementioned range, the inlet flow of hydrogen and trichlorosilane increased linearly and continuously to 100.8Nm with the increas...

Example Embodiment

[0127] Example 2:

[0128] In this embodiment, the reaction pressure in the reduction furnace is controlled at 0.3 MPa, and the reaction temperature is controlled at 1100°C.

[0129] At the beginning of the manufacturing method (at time 0), the hydrogen and trichlorosilane were adjusted to 36.6Nm 3 / h and 6.1Nm 3 / h of air intake is continuously passed into the reduction furnace. At this time, the molar ratio Q value is 6.

[0130] First, it takes 40 hours to make the molar ratio Q in the upper-stage expression of the aforementioned first-order piecewise function (wherein the first-order piecewise function expression a value, b value, c value, and d value are passed according to the aforementioned Determined by calculation method, omitted here, the same below) continuously changed to 3.0, at the same time, within the aforementioned range, the inlet flow rate of hydrogen and trichlorosilane increased linearly and continuously to 128.1Nm with the increase of deposition time. 3 / h and ...

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Abstract

The invention relates to a method for producing a polysilicon rod, which produces the polysilicon rod by continuously introducing a mixed gas which consists of hydrogen and a silicon containing gas and serves as a raw material gas to a reactor, and reacting the raw material gas in the reactor. The method for producing the polysilicon rod comprises the following steps: enabling the molar ratio Q of the hydrogen to the silicon containing gas to satisfy a specific relational expression by regulating the gas input M of the hydrogen serving as the raw material gas, and/or regulating the gas input N of the silicon containing gas serving as the raw material gas; and when the diameter of the polysilicon rod grows to 85 to 100 mm, enabling the Q value to fluctuate in an amplitude A. The method for producing the polysilicon rod of the invention improves the conversion per pass of trichlorosilane in a reduction process, and simultaneously, reduces the direct power consumption for the reduction of the trichlorosilane and effectively reduces the production cost of the polysilicon rod.

Description

technical field [0001] The invention relates to solar energy and semiconductor industries, in particular to a method for manufacturing polycrystalline silicon rods. Background technique [0002] Polycrystalline silicon is the main raw material for manufacturing semiconductor devices and solar cells, and can also be used to prepare monocrystalline silicon. Its deep-processed products are widely used in the semiconductor industry as the basis of artificial intelligence, automatic control, information processing, photoelectric conversion and other devices. Material. At the same time, due to the energy crisis and the call for a low-carbon economy, the world is actively developing and utilizing renewable energy. Solar energy has attracted the most attention among renewable energy sources due to its cleanness, safety, and abundant resources. One way to harness solar energy is by converting it into electricity through the photovoltaic effect. Silicon solar cells are the most com...

Claims

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Application Information

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IPC IPC(8): C01B33/027C01B33/03
Inventor 陈其国陈明元钟真武崔树玉梁强孔营王永亮
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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