Solid electrolyte SO2 gas sensor and manufacturing method thereof

A solid electrolyte and gas sensor technology, which is applied in semiconductor/solid-state device components, piezoelectric/electrostrictive/magnetostrictive devices, televisions, etc., can solve problems such as cumbersome production methods, poor performance parameters, and complexity. Achieve the effects of controllable electrode specific surface area, simple structure and improved performance

Inactive Publication Date: 2010-06-09
XI AN JIAOTONG UNIV
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Problems solved by technology

[0006] In order to solve the shortcomings of poor performance parameters such as sensitivity and response time of solid electrolyte gas sensors, as well as cumbersome and complicated manufacturing methods, the purpose of the present invention is to provide a solid electrolyte SO 2 The gas sensor and its manufacturing method can not only improve performance parameters such as the sensitivity and response time of the sensor, but also greatly simplify its manufacturing process

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  • Solid electrolyte SO2 gas sensor and manufacturing method thereof
  • Solid electrolyte SO2 gas sensor and manufacturing method thereof
  • Solid electrolyte SO2 gas sensor and manufacturing method thereof

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Embodiment Construction

[0021] refer to figure 1 , is a kind of solid electrolyte SO of the present invention 2 The gas sensor has a silicon substrate 1, and SiO 1 is sequentially arranged on the silicon substrate 1. 2 Insulation layer 2, conductive film 3, Sn / SnF 2 Film 4, LaF 3 The solid electrolyte film 5 and the Pt net 6, the conductive film 2 is connected to the first lead wiring board 7, the Pt net 6 is connected to the second lead wiring board 8, and the first lead 9 and the second lead 10 are respectively pasted by conductive glue Connect out and connect to the measurement signal processing circuit.

[0022] SiO on silicon substrate 1 2 Insulation layer 2 is obtained by thermal oxidation of silicon wafers, in SiO 2 Metal Al is deposited on the insulating layer 2 by ion sputtering to form a connected conductive film 3 and the first lead wiring pad 7, and Sn / SnF is deposited on the conductive film 3 by ion sputtering. 2 Film 4, LaF 3 Solid electrolyte film 5, in LaF 3 The solid electrol...

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Abstract

The invention relates to the field of SO2 gas sensors and discloses a solid electrolyte SO2 gas sensor and a manufacturing method thereof. The solid electrolyte SO2 gas sensor comprises a silicon substrate, and a SiO2 insulated layer, a conductive film, a Sn/SnF2 thin film, a LaF3 solid electrolyte thin film and a Pt net which are arranged on the silicon substrate in sequence. The conductive film is connected with a first lead; and the Pt net is connected with a second lead. In the technical scheme, the conductive film is an Al film; and the manufacturing method adopts an MEMS (Micro Electromechanical System) technology and has simple process and convenient realization.

Description

technical field [0001] The present invention relates to SO 2 Gas sensor field, especially a kind of solid electrolyte SO 2 Gas sensor and manufacturing method thereof. Background technique [0002] Compared with the widely used liquid electrolyte gas sensor, the solid electrolyte gas sensor avoids the defects of liquid electrolyte such as volatilization, difficult sealing, and corrosion of the sensor substrate, and has stability, applicability, and service life. Long and many other advantages are an important trend in the development of gas sensor technology. Researchers have used solid electrolytes instead of liquid electrolytes, and have developed some gas sensors, such as O 2 gas sensor. [0003] With the development of MEMS (Micro-Electro-Mechanical Systems) technology, the volume and structure of sensors are gradually developing towards miniaturization. Compared with macro-sized sensors, micro-sensors have the advantages of small size, low power consumption, high s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/407B81B7/02B81C1/00
Inventor 王海容孙国良任军强蒋庄德
Owner XI AN JIAOTONG UNIV
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