58results about How to "Stable processing technology" patented technology

The invention discloses a production method of polypropylene cooling masterbatch, including the following steps: (1) mixing: the following components by parts by weight are mixed for 10-20 minutes: 50-90 parts of polypropylene resin, 0.5-9.5 parts of dispersing agent, 0.1-0.6 part of surface modifier, 0.1-2.7 parts of lubricant and 0.2-0.8 part of liquidity regulator, and then the following components by parts by weight are sequentially added: 0.1-0.9 part of light stabilizer, 0.1-1.6 parts of antioxidant and 0.2-7 parts of molecular weight regulator, and mixing is carried out for 5-15 minutes; (2) pelletizing: the mixed material is subject to melt extrusion at 130-230 DEG C and then grain-sized dicing is carried out. The invention adopts compound peroxide as molecular weight regulator and adopts compound antioxidant, compound dispersing agent, compound light stabilizer and compound lubricant, and the produced polypropylene cooling masterbatch has the advantages of high initiator content, good dispersity and obvious cooling effect and modification effect.

The invention discloses a fire-retardant cable sheath material formulation and the preparation method thereof. The formulation comprises, by weight parts, 15 to 30 parts of chloroprene rubber, 15 to 30 parts of chlorinated polyethylene, 0.5 to 3.0 parts of zinc oxide, 0.5 to 3.0 parts of magnesium oxide, 0.2 to 1.0 parts of ethylene thiourea, 0.5 to 2.0 parts of dibenzothiazyl disulfide, 0.1 to 0.5 parts of tetramethylthiuram disulfide, 0.5 to 2.0 parts of N-phenyl-2-naphthylamine, 0.5 to 2.0 parts of stearic acid, 0.5 to 3.5 parts of paraffin, 1.0 to 5.0 parts of dioctyl phthalate, 5.0 to 15parts of carbon black with high abrasion resistance, 5.0 to 15 parts of semi-reinforced carbon black, 3.5 to 10 parts of calcium carbonate, 2.5 to 8 parts of bis(pentabromophenyl) ether, 1.0 to 3.0 parts of antimony trioxide, and 1.0 to 8.0 parts of aluminum hydroxide. The preparation method mainly comprises the following steps: plasticating, blending, mixing, thin-passing and calendaring and extruding the sheath.

The invention discloses application of a novel rice husk culture medium in industrial cultivation of white enokitake and relates to the technical field of edible mushroom culture. Raw materials in theculture medium include rice husk, corncob, rice bran, bran, dry bean residue, brewer's grain, soybean hull and shell powder. The rice husk is added as a part of the raw materials of the enokitake culture medium to replace part of corncob, so that the advantages of good storage condition, high supporting performance, high breathability and low cost are realized, the rice husk is effectively utilized and greatly consumed, comprehensive utilization of the rice husk is promoted actively, the objective of enokitake culture cost is lowered, and the problem that corncob alternative materials lower in cost need to be found due to the fact that constantly-rising price of the corncob used for enokitake culture and the problems of great resource waste, huge economic loss and serious environment pollution caused by the fact that the rice husk is taken as waste in many places are solved.

The invention discloses a miniature gas enricher and a preparation method thereof. The miniature gas enricher comprises a filling layer and a packaging layer covered on the filling layer, wherein a symmetrically distributed miniature spitting channel is processed on the upper surface of the filling layer; absorbing grains are filled in the channel; an air inlet and an air outlet which are communicated with the miniature spitting channel are formed on the packaging layer; a counter bore which is used for fixing a filtering layer is formed at the air outlet; an inlet adapter and an outlet adapter are hermetically arranged corresponding to the air inlet and the air outlet; a SiO2 dielectric layer is arranged on the filling layer; a pair of quick heating elements and a pair of sensitive temperature measurers are respectively arranged on the SiO2 dielectric layer. The enriched gas enters from the inlet adapter, is concentrated and enriched under the physical absorption effect of the absorbing grains and then passes through the filtering layer and is discharged from the outlet adapter. The miniature gas enricher disclosed by the invention can realize miniaturization and has the characteristics of high enriching rate, low power consumption, low cost, easiness in processing, stable materials, easiness in integration, and the like. The thick-film technology of the heating element is simple and the cost is low.

The invention discloses an LED based on a patterned substrate and a preparation method thereof. The LED based on the patterned substrate structurally and sequentially comprises a sapphire substrate with two polished sides, three pairs of InGaN / GaN layer quantum wells, a barrier layer made of GaN, five pairs of Ag / Si layer hyperbolic metamaterials and a surface protection layer Si layer from bottomto top. On the basis of a traditional LED, a plurality of layers of hyperbolic metamaterials are added, so that the LED luminous efficiency of the patterned substrate reaches 180 times and is far higher than that of the traditional LED, and the LED is simple in technological process, low in cost, stable in processing technology and easy to produce in batches. Therefore, the LED and the preparation method a great application prospect in LED research.

The invention discloses a method for producing boron nitride nano tube reinforced and toughened zirconium oxide ceramic, which comprises the following operations of: weighing boron nitride nano tube, zirconium oxide powder and zirconium oxide grinding balls, measuring anhydrous ethanol and pouring the anhydrous ethanol into a ball milling tank, and performing ball milling; drying the mixed slurryin an oven after ball milling, screening the dried mixed slurry, filling the screened powder into an alumina crucible, and pre-sintering the powder in a muffle furnace; filling the pre-sintered powder into a graphite mould, sintering the powder in a multifunctional sintering furnace, and naturally cooling the sintered powder to room temperature; and obtaining a finished product by mechanical processing of the sintered body such as grinding, cutting and the like. The method has the advantages of low cost, stable processing process, simple operation treatment, high production efficiency, high mechanical property of the product and the like. Under the same process condition, the bending strength of the zirconium oxide ceramic added with the boron nitride nano tube reaches 1,143.3MPa and is improved by 28 percent compared with pure zirconium oxide ceramic; and the fracture toughness reaches 14.3MPa.m1 / 2 and is improved by 80 percent compared with the pure zirconium oxide ceramic.

Provided is a fan convex ring thin wall metal pipe, wherein the convex ring and the pipe fitting are connected together. The cross sectional shape is vertical angle sector or five-edge trapezium, wherein the convex ring edge line of the vertical angle sector near the connecting end is a vertical line and the opposite connecting end is the fan-shaped arc line, and that, the convex ring edge line of the five-edge trapezium near the connecting end is a vertical line and the opposite connecting end is the edgefold line. The processing method adopts the cart roll forming machine to shape the machining pipe fitting convex ring through the rolling method, namely using the internal mold core of the bobbin roller as the male die. The outside diameter of the internal mold core of the bobbin roller must be smaller than the inside diameter of the machining fittings. When the external mold core of the bobbin roller is used as the cavity die, the inside diameter of the external mold core of the bobbin roller must be larger than the outside diameter of the machining fitting convex ring. The processed fittings are put into the inner of the external mold core of the bobbin roller and the internal mold core of the bobbin roller is inserted to the processed fittings. The position of the male die and the cavity die convex ring are corresponding each other, wherein the male die and the cavity die rotate separately. At the same time, the male die applies force to the radial direction of the fittings shaped to the convex ring through rolling. The advantages of the invention are that: it has stable processing technology, simple operation, rigidly controlled quality of the processing fittings, and excellent rounding of the convex ring in favor of assemble, good tightness of the fittings, high pull strength.

The present invention designs a laser welding tinning device and welding method. The tinning device includes a back plate, a laser position correction device, a camera, a laser processing head, a push wheel pair, a connecting rod, a tin feeding nozzle, a displacement sensor, an angle sensor, a balance Spring, controller, residue box, the angle sensor detects the swing angle of the connecting rod, the displacement sensor detects the up and down movement position of the connecting rod, and the controller calculates the moving speed and acceleration of the detecting head according to the displacement and angle change value of the detecting head; laser welding When using the position of the probe head for closed-loop control of the laser working height, closed-loop control of the feeding speed of the tin wire by using the force of the probe head, and closed-loop control of the position of the laser following the tin wire by using the probe head angle, it can make up for the height difference of the solder joints. The impact of the effect reduces the fixed requirements for product processing and expands the application range of laser welding. It can prevent mechanical collision or burn the processing base material, the process is stable, and the rate of qualified products is improved.

The invention relates to the field of photovoltaic modules, in particular to a preparation method of a novel colored BIPV (building integrated photovoltaics), which comprises the following steps: S1, plating a plurality of layers of optical films on the surface of a glass substrate, and controlling the visible light transmittance to be 30-90%, the reflectivity to be 70-10% and the absorptivity to be less than 0.5%; s2, separating the plated optical film from the glass substrate, and taking out the thin film layer; s3, grinding the thin film layer until the powder granularity reaches 10-60 microns to prepare the semitransparent color pigment; s4, uniformly mixing and stirring the pigment and the transparent glaze, and selecting different mixing proportions of the pigment and the transparent glaze according to the requirements of appearance and transmittance; s5, coating front plate glass of the BIPV with the prepared pigment through a silk-screen printing process; and S6, carrying out high-temperature sintering on the front plate glass coated with the pigment to obtain the colored glass front sheet. The color is rich in variety, is coordinated with the color of the building appearance, and greatly reduces the loss of the photoelectric conversion efficiency of the photovoltaic module.

The invention discloses an integral polishing ceramic carrier plate for wax-free polishing of semiconductor wafers. The ceramic carrier plate comprises a plate body and a groove located on the plate body, the groove and the plate body are integrated, the top of the groove is flush with the plate body, the groove is distributed on the periphery of the upper end of the plate body and is in a rotational symmetry shape, and the groove is used for bearing the semiconductor wafers. The problems that the temperature is low in the polishing process of the semiconductor wafers and the removal rate cannot be increased are solved, meanwhile, it is guaranteed that the wafers cannot slide and shake in the machining process, and the machining quality of the wafers is guaranteed.

The invention discloses a preparation method of a high-melting-point metal and alloy wire, and belongs to the field of processing of materials. The preparation method of the high-melting-point metal and alloy wire comprises the following specific steps: electrifying a drawn wire with alternating current and direct current so that the drawn wire is self-heated to reach a thermal machining temperature under the effect of current and a wire drawing process can be carried out at a large cross sectional area deformation ratio; meanwhile arranging a two-potential testing end in a wire heating section and measuring a potential value of a specific section of the drawn wire; accurately measuring the temperature of the wire according to the characteristics of resistance and temperature of the measured wire; and the heating power of the drawn wire is controlled by adjustment of fed current. Therefore, it can be ensured that wire drawing is carried out at a checked process temperature of the material. The method has the characteristics of high production efficiency, small product crystalline grains, zero raw material loss in a production process and the like.

The invention belongs to the technical field of sensors, in particular to a temperature control system used for an MEMS device. The temperature control system is characterized in that temperature detection electrodes and heating electrodes are distributed on surfaces of upper and lower substrates of the MEMS device; and a temperature detection circuit transmits electric signals detected by means of the temperature detection electrodes to a signal processing circuit, the signal processing circuit judges whether operating temperatures of the surfaces of the upper and lower substrates of the MEMSdevice are appropriate, and the signal processing circuit controls the operating temperatures of the surfaces of the upper and lower substrates of the MEMS device through controlling intensities of control electric signals input to the heating electrodes. The temperature control system provided by the invention can eliminate temperature performance and temperature hysteresis of the MEMS device.

The invention discloses a variable light distribution device based on silicon-based nitride and a preparation method thereof. The variable light distribution device comprises a lens, a quantum well GaN, P-GaN, N-GaN, an EL electrode, a GaN-based LED light source, an electrostatic MEMS (Micro-Electro-Mechanical System) micro performer and a Si substrate. The GaN-based LED light source is grown on the Si substrate. The lens is completely adhered right above the GaN-based LED light source. The electrostatic MEMS micro performer comprises a comb-shaped structure composed of fixed combs and movable combs. The fixed combs are connected with the Si substrate. The movable combs and the GaN-based LED light source are fixed together. The LED light source is arranged right above the movable combs. Through application of a voltage, the GaN-based LED light source carries out lateral movement on the Si substrate plane under the drive of a comb-shaped driver. When the GaN-based LED light source moves to an optical axis direction of the lens in parallel, collimated beams passing through the GaN-based LED light source are deflected according to an angle forming certain proportion with the Si substrate plane. The device can be applied to fields such as directional illumination, free space optical communication and a robot optical sensor.