Micro heating plate based on porous silicon insulation layer and preparation method thereof

A porous silicon layer and micro-heating technology, which is applied in ohmic resistance heating, heating element materials, ohmic resistance heating parts, etc., can solve the problems of complex process and various manufacturing processes, and achieve low cost, uniform temperature distribution, large The effect of contact area

Active Publication Date: 2017-11-28
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing micro-hotplates have many manufacturing processes and the process is relatively complicated. Issues such as the internal stress control generated by the thin film deposition process, the protection of wet corrosion, and the sacrificial layer process all need to be solved.

Method used

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  • Micro heating plate based on porous silicon insulation layer and preparation method thereof
  • Micro heating plate based on porous silicon insulation layer and preparation method thereof
  • Micro heating plate based on porous silicon insulation layer and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0035] A micro-heating plate based on a porous silicon thermal insulation layer, the heating plate adopts a multilayer structure, refer to figure 1 , From top to bottom including electrode group 1, porous silicon layer 2, silicon dioxide layer 3 and silicon base 4, said electrode group 1 includes heating electrode 5 and signal electrode 6, refer to figure 2 , The heating electrode 5 has a serpentine shape, the signal electrode 6 is an interdigital electrode, the signal electrode 6 is arranged in a serpentine depression of the heating electrode 5, and the heating electrode 5 and the signal electrode 6 are mutually not in contact. The electrode group 1 has a thickness of 35 μm, the porous silicon layer 2 has a thickness of 100 μm, the silicon dioxide layer 3 has a thickness of 35 μm, and the silicon base 4 has a thickness of 1.8 mm.

[0036] The silicon base 4 options For single crystal silicon, a silicon dioxide layer 3 is provided on the upper surface of the silicon base 4 to su...

Embodiment 2

[0044] A micro-heating plate based on a porous silicon thermal insulation layer, the heating plate adopts a multilayer structure, refer to figure 1 , From top to bottom including electrode group 1, porous silicon layer 2, silicon dioxide layer 3 and silicon base 4, said electrode group 1 includes heating electrode 5 and signal electrode 6, refer to figure 2 , The heating electrode 5 has a serpentine shape, the signal electrode 6 is an interdigital electrode, the signal electrode 6 is arranged in a serpentine depression of the heating electrode 5, and the heating electrode 5 and the signal electrode 6 are mutually not in contact. The thickness of the electrode group 1 is 45 μm, the thickness of the porous silicon layer 2 is 110 μm, the thickness of the silicon dioxide layer 3 is 45 μm, and the thickness of the silicon base 4 is 2.2 mm.

[0045] The silicon base 4 options For single crystal silicon, a silicon dioxide layer 3 is provided on the upper surface of the silicon base 4 t...

Embodiment 3

[0053] A micro-heating plate based on a porous silicon thermal insulation layer, the heating plate adopts a multilayer structure, refer to figure 1 , From top to bottom including electrode group 1, porous silicon layer 2, silicon dioxide layer 3 and silicon base 4, said electrode group 1 includes heating electrode 5 and signal electrode 6, refer to figure 2 , The heating electrode 5 has a serpentine shape, the signal electrode 6 is an interdigital electrode, the signal electrode 6 is arranged in a serpentine depression of the heating electrode 5, and the heating electrode 5 and the signal electrode 6 are mutually not in contact. The thickness of the electrode group 1 is 40 μm, the thickness of the porous silicon layer 2 is 110 μm, the thickness of the silicon dioxide layer 3 is 40 μm, and the thickness of the silicon base 4 is 2 mm.

[0054] The silicon base 4 options For single crystal silicon, a silicon dioxide layer 3 is provided on the upper surface of the silicon base 4 to ...

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Abstract

A micro heating plate based on a porous silicon insulation layer and a preparation method thereof are provided, which belong to the technical field of silicon-based heating plates for gas sensors. The micro heating plate includes, sequentially from top to bottom, an electrode group, a porous silicon layer, a silicon dioxide layer, and a silicon base. The electrode group includes a heating electrode and a signal electrode. The heating electrode is snake-shaped. The signal electrode is an interdigital electrode. The interdigital bulges of the signal electrode are in the depressed portions of the snake shape of the heating electrode. The heating electrode and the signal electrode do not contact each other. A novel porous silicon insulation layer material replaces the existing silicon dioxide and silicon nitride insulation layer material. The silicon base released by a bulk silicon processing technology is used, and the silicon base is prepared through backside silicon etching. The contact area between the insulation layer and the air is increased. Dissipation of heat on the heating plate can be greatly reduced. The micro heating plate has the advantages of small size, high sensitivity, low cost, low power consumption, easy batch production, strong mechanical and electrical performance, stable processing technology, and the like.

Description

Technical field [0001] The invention belongs to the technical field of silicon-based heating plates for gas sensors, and specifically relates to a micro-heating plate based on a porous silicon heat insulating layer and a preparation method thereof. Background technique [0002] People perceive the phenomena and changes in the surrounding environment through the senses of the five senses, that is, vision, taste, touch, smell, hearing, etc., so as to continuously understand nature and the world, and then to develop science, develop resources, and transform the world for the benefit of mankind. Sensor technology is to realize the artificialization of the five senses, based on the bionics technology, to realize the five artificial senses. [0003] The development of industry has caused a large amount of exhaust gas to be discharged into the atmosphere every year. The emission of these harmful gases has caused serious damage to the natural environment and ecological balance, such as ac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/03H05B3/10H05B3/16H05B3/26
CPCH05B3/03H05B3/10H05B3/16H05B3/265
Inventor 李卫冯志麟戴恩文刘菊燕丁超
Owner NANJING UNIV OF POSTS & TELECOMM
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