Dynamic random access memory and preparation method thereof

A dynamic random access and memory technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems that affect product performance, electrodes cannot be directly connected to the conductive layer, and grooves are narrow and deep.

Active Publication Date: 2021-03-12
XIA TAI XIN SEMICON QING DAO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

An existing method for increasing the electrode area of ​​a capacitor is as follows: an insulating layer is arranged above a conductive layer, a groove is opened through the insulating layer, and the electrode is formed on the groove wall of the groove to increase the area of ​​the ele

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  • Dynamic random access memory and preparation method thereof
  • Dynamic random access memory and preparation method thereof
  • Dynamic random access memory and preparation method thereof

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Embodiment Construction

[0025] The drawings illustrate embodiments of the invention, which may be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure of the present invention will be more thorough and complete, and the scope of the present invention will be fully understood by those skilled in the art. In the drawings, the dimensions of layers and regions are exaggerated for clarity.

[0026] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant field, and not to be interpreted in an overly idealistic or overly formal sense , unless expli...

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Abstract

A preparation method of a dynamic random access memory comprises the following steps: providing a conductive layer and a plurality of contact plugs formed in the conductive layer at intervals, the conductive layer comprising a contact surface, each contact plug partially protruding out of the contact surface, and each contact plug comprising a top surface and a side surface protruding on the contact surface; forming a barrier layer on the conductive layer and the contact plug; forming a dielectric layer on one side, far away from the conductive layer, of the barrier layer; etching the dielectric layer and the barrier layer to form a plurality of grooves until the conductive layer is exposed, wherein each groove is located between two adjacent contact plugs; and forming an electrode layer on the hole wall of each groove so as to be connected with the conductive layer. The invention also provides the memory prepared by adopting the method. In this way, the stability of all the electrodelayers in the subsequent grooves and the enough contact connection area of the electrode layers and the conducting layer can be guaranteed.

Description

technical field [0001] The invention relates to a dynamic random access memory and a preparation method thereof, in particular to a capacitor applied to a dynamic random access memory and a preparation method thereof. Background technique [0002] Each memory cell of the DRAM includes a select transistor and a capacitor connected in series with the select transistor. In order to achieve a large capacity, the capacitor in the memory unit must be miniaturized, so that the electrode area of ​​the capacitor is insufficient, and its capacitance cannot be increased. In order to increase the capacitance capacity of the memory unit, it is necessary to increase the electrode area of ​​the capacitor in a limited space. An existing method for increasing the electrode area of ​​a capacitor is as follows: an insulating layer is arranged above a conductive layer, a groove is opened through the insulating layer, and the electrode is formed on the groove wall of the groove to increase the ...

Claims

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Application Information

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IPC IPC(8): H01L21/8242H01L27/108
CPCH10B12/31H10B12/033H10B12/0335Y02D10/00
Inventor 南昌铉吕寅准
Owner XIA TAI XIN SEMICON QING DAO LTD
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