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Annealing method

A technology of annealing and water vapor, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of low efficiency of the annealing process, and achieve the effect of reducing the total time

Inactive Publication Date: 2010-06-16
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem to be solved by the present invention is that the efficiency of the annealing process in the current process is relatively low

Method used

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Embodiment approach

[0015] refer to figure 1 As shown, one embodiment of the annealing method of the present invention includes the following steps:

[0016] Step s1, performing steam annealing in a single-wafer rapid heat treatment device;

[0017] In step s2, after the annealing is completed, the wafer is transferred to another single-wafer rapid thermal treatment chamber for drying and annealing.

[0018] In the above embodiment, the two-step annealing process is performed in different chambers, and each chamber for wafer annealing only needs to adjust the process conditions of this annealing step, so the two-step annealing process does not require preparation for process condition conversion, Saves annealing time.

[0019] In addition, since the two chambers for annealing are single-wafer reaction chambers, when the reaction wafer is placed in it for annealing, the reaction chamber with only one wafer can quickly reach the process conditions of wafer annealing. This further saves annealing...

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Abstract

The invention discloses an annealing method, which comprises the following steps: performing steam annealing in a single wafer rapid thermal processing chamber; and after the annealing is completed, moving a wafer into another single wafer rapid thermal processing chamber to perform dry annealing.

Description

technical field [0001] The present invention relates to the field of semiconductor device manufacturing, in particular to an annealing method. Background technique [0002] Today, in the semiconductor manufacturing process, a shallow trench isolation process is generally used to form the isolation structure. In this process, shallow trenches are first formed on the substrate, and the elements are separated by etched shallow trenches, and then oxide linings are formed on the sidewalls and bottom of the trenches, and then chemical vapor deposition (CVD) is used to separate them. ) fills the shallow trenches with an insulating dielectric, such as silicon oxide. After filling the insulating medium, the surface of the trench is planarized by chemical mechanical polishing (CMP). [0003] In the manufacturing process of the shallow trench isolation structure, after the trench is formed on the semiconductor base material, the sidewalls of the isolation trench are oxidized in the s...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/3105H01L21/762
Inventor 刘明源何永根
Owner SEMICON MFG INT (SHANGHAI) CORP