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Chemical Mechanical Polishing and Through Hole Forming Method

A technology of chemical machinery and grinding slurry, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problems of affecting process implementation and roughness and inequality

Inactive Publication Date: 2011-12-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method for chemical mechanical grinding and through-hole formation, which solves the problem of roughness after grinding in the existing process and affects the implementation of subsequent processes

Method used

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  • Chemical Mechanical Polishing and Through Hole Forming Method
  • Chemical Mechanical Polishing and Through Hole Forming Method
  • Chemical Mechanical Polishing and Through Hole Forming Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0019] refer to figure 1 Shown, a kind of embodiment of the method for chemical mechanical polishing of the present invention comprises:

[0020] Step s1, using the first grinding slurry to grind the semiconductor structure having both the first grinding medium and the second grinding medium in the horizontal direction, so as to thin the first grinding medium;

[0021] Step s2, judging whether the thinned thickness of the first grinding medium meets the preset requirement, if yes, execute step s3; if not, execute step s5;

[0022] Step s3, using the second grinding slurry to grind the second grinding medium to be flush with the first grinding medium;

[0023] Step s4, stop grinding;

[0024] Step s5, judging whether the collapse height of the second grinding medium has been reached, if so, execute step s6; if not, return to step s1;

[0025] In step s6 , use the second grinding slurry to grind the second grinding medium until it is flush with the first grinding medium, and ...

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Abstract

A chemical mechanical polishing and through-hole forming method, the chemical mechanical polishing method includes: using a first polishing slurry to polish a semiconductor structure with a first grinding medium and a second grinding medium in the horizontal direction, so as to thin the first Grinding medium; when the second grinding medium reaches the collapsed height, stop grinding the first grinding medium, and turn to use the second grinding slurry to grind the second grinding medium to be flush with the first grinding medium; if the thickness of the first grinding medium is reduced If the preset requirements are not met, repeat the above steps. The chemical mechanical polishing method makes the polished surface relatively smooth.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for chemical mechanical grinding and through hole formation. Background technique [0002] With the rapid development of ULSI (Ultra Large Scale Integration), the manufacturing process of integrated circuits has become more and more complex and sophisticated. In order to improve the integration level and reduce the manufacturing cost, the key dimensions of the components are getting smaller and the number of components per unit area of ​​the chip is increasing. Vertical space, to further increase the integration density of the device, needs to use conductive vias for electrical connection between the layers of wiring, and the conductive vias are separated by insulating layers. For example, in Chinese patent application No. 200710088223, a first interlayer insulating layer is first formed on a semiconductor substrate in which an underlying structure has been fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/768
Inventor 蒋莉邵颖黎铭琦
Owner SEMICON MFG INT (SHANGHAI) CORP