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Flash memory device and manufacturing method of the same

A technology of storage device and manufacturing method, applied in semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device, etc., can solve problems such as non-erasable operation

Inactive Publication Date: 2010-07-07
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is not possible to operate the same erase operation

Method used

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  • Flash memory device and manufacturing method of the same
  • Flash memory device and manufacturing method of the same
  • Flash memory device and manufacturing method of the same

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0013] Hereinafter, embodiments will be described with reference to the drawings.

[0014] In the description of an embodiment, when an element is referred to as being "on / under" another element, it may be directly on / under the other element or one or more intervening elements may be interposed therebetween. The element is thus indirectly above / below the other element.

[0015] In the drawings, the thickness or size of each layer may be exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size thereof.

[0016] image 3 showing a flash memory device according to one embodiment, Figure 4A with 4B is along image 3 The cross-sectional views taken by the lines X-X' and Y-Y' respectively.

[0017] Such as image 3 , 4A As shown in and 4B, a flash memory device according to one embodiment includes: a device isolation layer 5 and an active region 10 formed on a semicond...

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PUM

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Abstract

The invention discloses a flash memory device and manufacturing method of the same. The flash memory device is disclosed including: a device isolation layer and an active area formed on a semiconductor substrate in which a source plate and a bit line area are defined; a memory gate formed over the active area of the bit line area; a control gate formed on the semiconductor substrate including the memory gate; a common source area and a drain area disposed on both sides of the control gate; and a common source line contact formed over the common source area of the semiconductor substrate at the active area of the source plate, wherein the active area of the source plate is formed having the same interval with the active area of the bit line area, and the control gate is formed to cross the source plate and the bit line area disposed at both sides of the source plate.

Description

technical field [0001] The present invention relates to a flash memory device and a manufacturing method thereof. Background technique [0002] A flash memory device is a nonvolatile storage medium in which data stored is not damaged even if the power is turned off, and has an advantage in that the speed of data processing such as recording, reading, and deletion is relatively high. [0003] Accordingly, flash memory devices are widely used in Bios of personal computers (PCs), in data storage of set-top boxes, printers, and network servers, and recently in digital cameras and cellular phones. [0004] In the flash memory device, a stacked gate type semiconductor device using a floating gate and a semiconductor device having a silicon-oxide-nitride-oxide-silicon (SONOS) structure are employed. [0005] Flash memory devices can only become competitive (in terms of area) if the unit cells are concentrated on a narrow area to form a common source line rather than contacts on in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/8247H10B69/00
CPCH01L27/11521H10B41/30H10B41/10H01L21/31051H01L21/76224H01L21/823475
Inventor 沈千万
Owner DONGBU HITEK CO LTD