Current-limiting circuit for testing performance indexes of resistive random access memory (RRAM)

Abstract

The invention discloses a current-limiting circuit for testing performance indexes of a resistive random access memory (RRAM), which at least comprises a voltage comparator, a single-pole double-throw analog switch, a RRAM and a current-limiting MOS tube, wherein reading-writing-erasing pulse signals are divided into two paths of signals to be input into the circuit; one path of signals are input into the voltage comparator to be used for distinguishing the reading-writing-erasing voltage, the reference voltage of the voltage comparator is regulated according to the operating level of the reading-writing-erasing pulse signals, and the level output by the voltage comparator is used as the control signal of the single-pole double-throw analog switch, thereby determining whether to gate to the branch of the current-limiting MOS tube or ground under the operating voltage through the control signal; and the other path of signals are directly applied to the RRAM to be tested to provide the operating voltage. The invention finishes the current-limiting test of the RRAM, reliably tests the performance indexes of the prepared memory sample wafer, and solves the current-limiting problem of the RRAM in the set process in the pulse test mode.

Description

technical field [0001] The invention relates to the technical field of nanometer devices and circuit design, in particular to a current-limiting circuit for testing the performance index of a resistive memory. Background technique [0002] Resistive RAM (RRAM) has attracted much attention as the next generation of non-volatile memory. At present, many research institutions and technology development departments in the world have done research and related reports on RRAM. RRAM technology is based on the fact that the resistance of thin-film materials can be reversibly switched between a high-resistance state and a low-resistance state. According to its resistance switching operation mode, it can be divided into unipolar and bipolar memories. [0003] During the RRAM memory test process, semiconductor IV tester equipment is generally used to provide the converted working voltage to the RRAM, and measure the current of the device, so as to obtain the state of the device and d...

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Problems solved by technology

[0004] However, DC tests generally have an impact on the performance of the device, and in practice some indicators often require pulses to coope

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